Optical properties of strained AlGaN and GaInN on GaN
- Author
- TAKEUCHI, T1 ; TAKEUCHI, H1 ; SOTA, S1 ; SAKAI, H1 ; AMANO, H1 ; AKASAKI, I1
[1] Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan - Source
Japanese journal of applied physics. 1997, Vol 36, Num 2B, pp L177-L179 ; 2 ; ref : 25 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium nitrure Bande interdite Composition chimique Composé ternaire Contrainte Etude expérimentale Gallium nitrure Hétérostructure Indium nitrure Matériau semiconducteur Méthode MOVPE Photoluminescence Al Ga N AlGaN Ga In N GaInN Composé minéral
- Keyword (en)
- Aluminium nitrides Energy gap Chemical composition Ternary compounds Stresses Experimental study Gallium nitrides Heterostructures Indium nitrides Semiconductor materials MOVPE method Photoluminescence Inorganic compounds
- Keyword (es)
- Método MOVPE
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55C Iii-v semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66F Iii-v semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2590167
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.36.L177 
https://dx.doi.org/10.1143/JJAP.36.L177
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