Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices
- Author
- CHANDRA, S. V. Jagadeesh1 ; FORTUNATO, E1 ; MARTINS, R1 ; CHOI, Chel-Jong2 3
[1] Departamento de Ciência dos Materiais, CENIMAT/I3N, Faculdade de Ciências e Tecnologia (FCT), Universidade Nova de Lisboa, 2829-516 Caparica, Portugal
[2] Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756, Korea, Republic of
[3] School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea, Republic of - Conference title
- Proceedings of the EMRS 2011 Spring Meeting Symposium D: Processing and Characterization of Nanoscale Multi Functional Oxide Films III
- Conference name
- EMRS 2011 Spring Meeting. Symposium D: Processing and Characterization of Nanoscale Multi Functional Oxide Films III (Nice 2011-05-09)
- Author (monograph)
- CRACIUN, Valentin (Editor)1 2 3 ; GUILLOUX-VIRY, Maryline (Editor)4 ; ALEXE, Marin (Editor)5 ; CATALAN BERNABE, Gustau (Editor)6 ; FANCIULLI, Marco (Editor)7
European Materials Research Society (E-MRS), Strasbourg, France (Organiser of meeting)
[1] University of Florida, United States
[2] National Institute for Laser, Plasma and Radiation Physics, Bucharest, Romania
[3] Plasma and Radiation Physics, Bucharest, Romania
[4] University of Rennes 1, France
[5] Max Planck Institute of Microstructure Physics, Halle, Germany
[6] Centre d’Investigacions en Nanociencia I Nanotecnologia (CIN2-CSIC), Barcelona, Spain
[7] Università di Milano-Bicocca, Milano, Italy - Source
Thin solid films. 2012, Vol 520, Num 14, pp 4556-4558, 3 p ; ref : 16 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Fermi level pinning Germanium HfO2 Interface Silicon
- Keyword (fr)
- Ancrage Capacité électrique Dispositif semiconducteur Electrode commande Germanium Interface Niveau Fermi Oxyde d'hafnium Platine Recuit thermique Silicium Structure électronique Tellurure de gallium Température recuit Traitement thermique Travail sortie 7320 7320A 7330 HfO2 Pt Si
- Keyword (en)
- Pinning Capacitance Semiconductor devices Gates Germanium Interfaces Fermi level Hafnium oxide Platinum Thermal annealing Silicon Electronic structure Gallium tellurides Annealing temperature Heat treatments Work functions
- Keyword (es)
- Hafnio óxido Recocido térmico Temperatura recocido
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states / 001B70C20A Surface states, band structure, electron density of states
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C30 Surface double layers, schottky barriers, and work functions
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 25943507
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2011.10.137 
https://dx.doi.org/10.1016/j.tsf.2011.10.137
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