Influence of target-substrate distance and composition on the preferential orientation of yttria-stabilized zirconia thin films
- Author
- LAMAS, J. S1 ; LEROY, W. P1 ; DEPLA, D1
[1] Research Group DRAFT, Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1 9000 Ghent, Belgium - Conference title
- Proceedings of the EMRS 2011 Spring Meeting Symposium D: Processing and Characterization of Nanoscale Multi Functional Oxide Films III
- Conference name
- EMRS 2011 Spring Meeting. Symposium D: Processing and Characterization of Nanoscale Multi Functional Oxide Films III (Nice 2011-05-09)
- Author (monograph)
- CRACIUN, Valentin (Editor)1 2 3 ; GUILLOUX-VIRY, Maryline (Editor)4 ; ALEXE, Marin (Editor)5 ; CATALAN BERNABE, Gustau (Editor)6 ; FANCIULLI, Marco (Editor)7
European Materials Research Society (E-MRS), Strasbourg, France (Organiser of meeting)
[1] University of Florida, United States
[2] National Institute for Laser, Plasma and Radiation Physics, Bucharest, Romania
[3] Plasma and Radiation Physics, Bucharest, Romania
[4] University of Rennes 1, France
[5] Max Planck Institute of Microstructure Physics, Halle, Germany
[6] Centre d’Investigacions en Nanociencia I Nanotecnologia (CIN2-CSIC), Barcelona, Spain
[7] Università di Milano-Bicocca, Milano, Italy - Source
Thin solid films. 2012, Vol 520, Num 14, pp 4782-4785, 4 p ; ref : 28 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Energy per arriving atom Magnetron sputtering Preferential orientation YSZ thin films
- Keyword (fr)
- Basse pression Couche mince Dépôt physique phase vapeur Dépôt pulvérisation Effet pression Energie surface Haute pression Mécanisme croissance Orientation cristalline Orientation préférentielle Pulvérisation cathodique Structure cristalline Zircone stabilisée 6855A 6855J 8115A 8115C
- Keyword (en)
- Low pressure Thin films Physical vapor deposition Sputter deposition Pressure effects Surface energy High pressure Growth mechanism Crystal orientation Preferred orientation Cathode sputtering Crystal structure Stabilized zirconia
- Keyword (es)
- Mecanismo crecimiento Orientación preferencial Zircona estabilizada
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 25943557
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2011.10.179 
https://dx.doi.org/10.1016/j.tsf.2011.10.179
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