Low-Voltage High-Stability Indium-Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum
- Author
- LINFENG LAN1 ; MINGJIE ZHAO1 ; NANA XIONG1 ; PENG XIAO1 ; WEN SHI1 ; MIAO XU1 ; JUNBIAO PENG1
[1] State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China - Source
IEEE electron device letters. 2012, Vol 33, Num 6, pp 827-829, 3 p ; ref : 17 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Al Nd anodize transistor zinc oxide
- Keyword (fr)
- Addition néodyme Alumine Aluminium Basse tension Capacité électrique Champ intense Courant fuite Endommagement Grille transistor Matériau dopé Oxyde anodique Oxyde d'indium Oxyde de zinc Recuit Transistor couche mince Al2O3 Composé III-VI
- Keyword (en)
- Neodymium addition Alumina Aluminium Low voltage Capacitance High field Leakage current Damaging Transistor gate Doped materials Anodic oxide Indium oxide Zinc oxide Annealing Thin film transistor III-VI compound
- Keyword (es)
- Adición neodimio Alúmina Aluminio Baja tensión Capacitancia Campo intenso Corriente escape Deterioración Rejilla transistor Oxido anódico Indio óxido Zinc óxido Recocido Transistor capa delgada Compuesto III-VI
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 25949678
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2012.2190966 
https://dx.doi.org/10.1109/LED.2012.2190966
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