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A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology

Author
GERSBACH, Marek1 2 6 ; MARUYAMA, Yuki6 ; TRIMANANDA, Rahmadi6 ; FISHBURN, Matt W6 ; STOPPA, David3 ; RICHARDSON, Justin A4 5 ; WALKER, Richard4 ; HENDERSON, Robert4 ; CHARBON, Edoardo7
[1] Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
[2] Meggit PLC, Christchurch, Dorset BH23 6EW, United Kingdom
[3] Fondazione Bruno Kessler, 38123 Trento, Italy
[4] University of Edin- burgh, Edinburgh EH9 3JF, Scotland, United Kingdom
[5] Dialog Semiconductor, Edinburgh, EH1 3DQ, Scotland, United Kingdom
[6] TU Delft, 2628 CD Delft, Netherlands
[7] Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland, and TU Delft, 2628 CD Delft, Netherlands
Source

IEEE journal of solid-state circuits. 2012, Vol 47, Num 6, pp 1394-1407, 14 p ; ref : 28 ref

CODEN
IJSCBC
ISSN
0018-9200
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
-Single-photon imaging FCS FLIM SPAD TDC fluorescence correlation spectroscopy fluorescence lifetime imaging microscopy single-photon avalanche diode time-of-flight time-resolved imaging time-to-digital converter
Keyword (fr)
Capteur mesure Circuit faible bruit Convertisseur signal Durabilité Détecteur image Effet non linéaire Fiabilité Fluorescence Formation image tridimensionnelle Formation image Image tridimensionnelle Miniaturisation Méthode temps vol Photodiode avalanche Photodétecteur Phénomène non linéaire Précision élevée Résolution temporelle Spectrométrie fluorescence Stéréoscopie Technologie MOS complémentaire 0707D Conversion temps numérique Dispositif optoélectronique
Keyword (en)
Measurement sensor Low noise circuit Signal converter Durability Image sensor Non linear effect Reliability Fluorescence 3D imaging Imaging Tridimensional image Miniaturization Time of flight method Avalanche photodiodes Photodetector Non linear phenomenon High precision Time resolution Fluorescence spectrometry Stereoscopy Complementary MOS technology Time to digital conversion Optoelectronic device
Keyword (es)
Captador medida Circuito débil ruido Convertidor señal Durabilidad Detector imagen Efecto no lineal Fiabilidad Fluorescencia Formación imagen tridimensional Formación imagen Imagen tridimensional Miniaturización Método tiempo vuelo Fotodetector Fenómeno no lineal Precisión elevada Resolución temporal Espectrometría fluorescencia Estereoscopia Tecnología MOS complementario Dispositivo optoelectrónico
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F16 Imaging devices

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A4 Signal convertors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
25982730

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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