Multi feed seed (MFS) high pressure crystallization of 1―2 in GaN
- Author
- BOCKOWSKI, M1 2 ; GRZEGORY, I1 ; LUCZNIK, B1 2 ; SOCHACKI, T1 ; NOWAK, G1 ; SADOVYI, B1 3 ; STRAK, P1 ; KAMLER, G1 ; LITWIN-STASZEWSKA, E1 ; POROWSKI, S1
[1] Institute of High Pressure Physics PAS, ul., Sokołowska 29/37, 01-142 Warsaw, Poland
[2] TopGaN Ltd., ul., Sokołowska 29/37, 01-142 Warsaw, Poland
[3] Department of Physics, Ivan Franko National University of Lviv, Dragomanova st., 50, Lviv UA 79005, Ukraine - Conference title
- The 7th International Workshop on Bulk Nitride Semiconductors (IWBNS VII)
- Conference name
- International Workshop on Bulk Nitride Semiconductors (IWBNS VII) (IWBNS VII) (7 ; Koyasan, Wakayama 2011-03-15)
- Author (monograph)
- FREITAS, Jaime (Editor)1 ; SITAR, Zlatko (Editor)2 ; KUMAGAI, Yoshinao (Editor)3 ; MEISSENER, Elke (Editor)4
[1] Naval Research Laboratory, Washington, DC 20375, United States
[2] North Carolina State University, Raleigh, NC 27695, United States
[3] Tokyo University of Agriculture and Technology, Konagei, Tokyo 184-8588, Japan
[4] Fraunhofer IISB, Department of Crystal Growth, 91058 Erlangen, Germany - Source
Journal of crystal growth. 2012, Vol 350, Num 1, pp 5-10, 6 p ; ref : 9 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- A2. Growth from high temperature solutions A2. Seed crystals
- Keyword (fr)
- Composé III-V Cristallisation Croissance cristalline en solution Croissance cristalline Densité défaut Densité porteur charge Diode laser Dépendance température Epitaxie phase vapeur Germe cristallin Gradient température Haute pression Laser semiconducteur Mécanisme croissance Méthode en solution Nitrure de gallium Plasmon Porteur libre Propriété physique Propriété électrique Semiconducteur III-V 6470K 8110A 8110D 8115K GaN Substrat GaN
- Keyword (en)
- III-V compound Crystallization Crystal growth from solutions Crystal growth Defect density Carrier density Laser diodes Temperature dependence VPE Crystal seeds Temperature gradients High pressure Semiconductor lasers Growth mechanism Growth from solution Gallium nitride Plasmons Free carrier Physical properties Electrical properties III-V semiconductors
- Keyword (es)
- Compuesto III-V Densidad defecto Mecanismo crecimiento Método en solución Galio nitruro Portador libre
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60D Equations of state, phase equilibria, and phase transitions / 001B60D70 Specific phase transitions / 001B60D70K Solid-solid transitions
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10D Growth from solutions
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26005935
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2011.12.013 
https://dx.doi.org/10.1016/j.jcrysgro.2011.12.013
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