Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface
- Author
- OGAWA, Masatoshi1 ; KAMIYA, Shoji1 ; IZUMI, Hayato1 ; TOKUDA, Yutaka2
[1] Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
[2] Aichi Institute of Technology, Yachikusa, Yakusa-cho, Toyota, Aichi 470-0392, Japan - Conference title
- Proceedings of the 26th International Conference on Defects in Semiconductors 26th ICDS
- Conference name
- International Conference on Defects in Semiconductors (ICDS-26) (ICDS-26) (26 ; Nelson 2011-07-18)
- Author (monograph)
- EVANS-FREEMAN, Jan (Editor)1 ; VERNON-PARRY, Karen (Editor)2 ; ALLEN, Martin (Editor)1
[1] University of Canterbury, Christchurch, New Zealand
[2] Sheffield Hallam University, Sheffield, United Kingdom - Source
Physica. B, Condensed matter. 2012, Vol 407, Num 15, pp 3034-3037, 4 p ; ref : 12 ref
- ISSN
- 0921-4526
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Adsorption DLTS Desorption Dislocation Si Trap level
- Keyword (fr)
- Adsorption Atmosphère contrôlée DLTS Dislocation Désorption Effet température Etat défaut Monocristal Piégeage porteur charge Silicium Traitement thermique Si
- Keyword (en)
- Adsorption Controlled atmospheres DLTS Dislocations Desorption Temperature effects Defect states Monocrystals Charge carrier trapping Silicon Heat treatments
- Keyword (es)
- Captura portador carga
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26093354
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/j.physb.2011.09.139 
https://dx.doi.org/10.1016/j.physb.2011.09.139
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physb.2011.09.139\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:117:\"Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface\";s:9:\"\u0000*\u0000jtitle\";s:28:\"Physica. B, Condensed matter\";s:9:\"\u0000*\u0000stitle\";s:26:\"Physica, B Condens. matter\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:3:\"407\";s:8:\"\u0000*\u0000issue\";s:2:\"15\";s:8:\"\u0000*\u0000spage\";s:4:\"3034\";s:8:\"\u0000*\u0000epage\";s:4:\"3037\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-4526\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"OGAWA\";s:10:\"\u0000*\u0000aufirst\";s:9:\"Masatoshi\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"KAMIYA, Shoji\";i:1;s:13:\"IZUMI, Hayato\";i:2;s:14:\"TOKUDA, Yutaka\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:87:\"Proceedings of the 26th International Conference on Defects in Semiconductors 26th ICDS\";s:8:\"\u0000*\u0000title\";s:117:\"Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physb.2011.09.139\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:117:\"Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface\";s:9:\"\u0000*\u0000jtitle\";s:28:\"Physica. B, Condensed matter\";s:9:\"\u0000*\u0000stitle\";s:26:\"Physica, B Condens. matter\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:3:\"407\";s:8:\"\u0000*\u0000issue\";s:2:\"15\";s:8:\"\u0000*\u0000spage\";s:4:\"3034\";s:8:\"\u0000*\u0000epage\";s:4:\"3037\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-4526\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"OGAWA\";s:10:\"\u0000*\u0000aufirst\";s:9:\"Masatoshi\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"KAMIYA, Shoji\";i:1;s:13:\"IZUMI, Hayato\";i:2;s:14:\"TOKUDA, Yutaka\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:87:\"Proceedings of the 26th International Conference on Defects in Semiconductors 26th ICDS\";s:8:\"\u0000*\u0000title\";s:117:\"Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physb.2011.09.139\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physb.2011.09.139\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:117:\"Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface\";s:9:\"\u0000*\u0000jtitle\";s:28:\"Physica. B, Condensed matter\";s:9:\"\u0000*\u0000stitle\";s:26:\"Physica, B Condens. matter\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:3:\"407\";s:8:\"\u0000*\u0000issue\";s:2:\"15\";s:8:\"\u0000*\u0000spage\";s:4:\"3034\";s:8:\"\u0000*\u0000epage\";s:4:\"3037\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-4526\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"OGAWA\";s:10:\"\u0000*\u0000aufirst\";s:9:\"Masatoshi\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"KAMIYA, Shoji\";i:1;s:13:\"IZUMI, Hayato\";i:2;s:14:\"TOKUDA, Yutaka\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:87:\"Proceedings of the 26th International Conference on Defects in Semiconductors 26th ICDS\";s:8:\"\u0000*\u0000title\";s:117:\"Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physb.2011.09.139\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:117:\"Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface\";s:9:\"\u0000*\u0000jtitle\";s:28:\"Physica. B, Condensed matter\";s:9:\"\u0000*\u0000stitle\";s:26:\"Physica, B Condens. matter\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:3:\"407\";s:8:\"\u0000*\u0000issue\";s:2:\"15\";s:8:\"\u0000*\u0000spage\";s:4:\"3034\";s:8:\"\u0000*\u0000epage\";s:4:\"3037\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-4526\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"OGAWA\";s:10:\"\u0000*\u0000aufirst\";s:9:\"Masatoshi\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"KAMIYA, Shoji\";i:1;s:13:\"IZUMI, Hayato\";i:2;s:14:\"TOKUDA, Yutaka\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:87:\"Proceedings of the 26th International Conference on Defects in Semiconductors 26th ICDS\";s:8:\"\u0000*\u0000title\";s:117:\"Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physb.2011.09.139\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:117:\"Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface\";s:9:\"\u0000*\u0000jtitle\";s:28:\"Physica. B, Condensed matter\";s:9:\"\u0000*\u0000stitle\";s:26:\"Physica, B Condens. matter\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:3:\"407\";s:8:\"\u0000*\u0000issue\";s:2:\"15\";s:8:\"\u0000*\u0000spage\";s:4:\"3034\";s:8:\"\u0000*\u0000epage\";s:4:\"3037\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-4526\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"OGAWA\";s:10:\"\u0000*\u0000aufirst\";s:9:\"Masatoshi\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"KAMIYA, Shoji\";i:1;s:13:\"IZUMI, Hayato\";i:2;s:14:\"TOKUDA, Yutaka\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:87:\"Proceedings of the 26th International Conference on Defects in Semiconductors 26th ICDS\";s:8:\"\u0000*\u0000title\";s:117:\"Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
