CMOS Phase-Locked Loop Circuits and Hot Carrier Effects
- Author
- YANG LIU1 ; SRIVASTAVA, Ashok1
[1] Department of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA 70803, United States - Issue title
- Power, Parasitics, and Process-Variation (P3) Awareness in Mixed-Signal Design
- Author (monograph)
- MOHANTY, Saraju P (Editor)1
[1] Department of Computer Science and Engineering, University of North Texas, United States - Source
Journal of low power electronics (Print). 2012, Vol 8, Num 3, pp 304-316, 13 p ; ref : 35 ref
- ISSN
- 1546-1998
- Scientific domain
- Electronics
- Publisher
- American Scientific Publishers, Stevenson Ranch, Calif
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- CMOS Integrated Circuit Dual-Modulus Prescaler Hot Carrier Effect Inductor Phase Noise Phase-Locked Loops Voltage-Controlled Oscillator
- Keyword (fr)
- Boucle verrouillage phase Bruit phase Circuit différentiel Circuit triphasé Conception circuit intégré Diode varactor Diviseur fréquence Diviseur préalable Electronique faible puissance Evaluation performance Fréquence oscillation Fréquence porteuse Gigue Haute fréquence Implémentation Oscillateur commande tension Porteur chaud Synthétiseur fréquence Technologie MOS complémentaire Technologie MOS Transistor MOSFET Valeur efficace
- Keyword (en)
- Phase locked loop Phase noise Differential circuit Three phase circuit Integrated circuit design Varactor diode Frequency divider Prescalers Low-power electronics Performance evaluation Oscillation frequency Carrier frequency Jitter High frequency Implementation Voltage controlled oscillator Hot carrier Frequency synthesizer Complementary MOS technology MOS technology MOSFET Root mean square value
- Keyword (es)
- Bucle enclavamiento fase Ruido fase Circuito diferencial Circuito trifase Diodo varactor Divisor frecuencia Evaluación prestación Frecuencia oscilación Frecuencia portadora Fluctuación Alta frecuencia Implementación Oscilador comando tensión Portador caliente Sintetizador frecuencia Tecnología MOS complementario Tecnología MOS Valor eficaz
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A1 Oscillators, resonators, synthetizers
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A5 Circuits of signal characteristics conditioning (including delay circuits)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26094895
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1166/jolpe.2012.1194 
https://dx.doi.org/10.1166/jolpe.2012.1194
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