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Compressive and tensile strain effects on atomic distribution in strained Si-Ge alloys

Author
GU, S1 ; ZHENG, Y1 ; ZHANG, R1 ; ZHU, S1
[1] Department of Physics, Nanjing University, Nanjing 210093, China
Source

Physica status solidi. A. Applied research. 1997, Vol 160, Num 1, pp 3-10 ; ref : 12 ref

CODEN
PSSABA
ISSN
0031-8965
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Wiley-VCH, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Arrangement atomique Composé binaire Contrainte compression Contrainte traction Dépôt chimique phase vapeur Etude expérimentale Germanium composé Mode opératoire Mode phonon Mode vibration Préparation Silicium composé Spectre Raman Ge Si Composé minéral
Keyword (en)
Atomic arrangement Binary compounds Compressive stress Tensile stress CVD Experimental study Germanium compounds Operating mode Phonon mode Vibrational mode Preparation Silicon compounds Raman spectra Inorganic compounds
Keyword (es)
Arreglo atómico Tensión compresión Tensión traccíon Método operatorio Modo fonón Modo de vibración Preparación
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60C Lattice dynamics / 001B60C20 Phonons and vibrations in crystal lattices / 001B60C20D Phonon states and bands, normal modes, and phonon dispersion

Pacs
6320D Phonon states and bands, normal modes, and phonon dispersion

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2612088

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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