Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
- Author
- BENGOECHEA-ENCABO, A1 ; ALBERT, S1 ; CALLEJA, E1 ; SANCHEZ-GARCIA, M. A1 ; LOPEZ, L. L2 ; ESTRADE, S2 3 ; REBLED, J. M2 4 ; PEIRO, F2 ; NATAF, G5 ; DE MIERRY, P5 ; ZUNIGA-PEREZ, J5
[1] ISOM and Departamento de Ingeniería Electronica, ETSIT, Universidad Politécnica, 28040 Madrid, Spain
[2] LENS, MIND-IN2UB, Departament d'Electrònlca, Universitat de Barcelona, Marti i Franquès 1, 08028 Barcelona, Spain
[3] MAT, CCiT, Universitat de Barcelona, Solé i Sabarís 1, 08028 Barcelona, Spain
[4] Institut de Ciència de Materials de Barcelona-CSIC, Campus UAB, 08193 Bellaterra, Spain
[5] CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, France - Source
Journal of crystal growth. 2012, Vol 353, Num 1, pp 1-4, 4 p ; ref : 23 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- A1. Nanostructures A3. Molecular beam epitaxy A3. Selective epitaxy B1. Nitrides
- Keyword (fr)
- Aire sélective Anisotropie Composé III-V Croissance latérale Croissance sélective Dépendance temps Epitaxie jet moléculaire Lithographie Nanocolonne Nanolithographie Nanostructure Nitrure de gallium Plan expérience Réaction dirigée Semiconducteur III-V Taux croissance Titane 8110A 8115H 8116N GaN
- Keyword (en)
- Selective area Anisotropy III-V compound Lateral growth Selective growth Time dependence Molecular beam epitaxy Lithography Nanocolumn Nanolithography Nanostructures Gallium nitride Experimental design Template reaction III-V semiconductors Growth rate Titanium
- Keyword (es)
- Compuesto III-V Crecimiento lateral Nanocolumna Galio nitruro Reacción dirigida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication / 001B80A16N Nanolithography
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26132145
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2011.11.069 
https://dx.doi.org/10.1016/j.jcrysgro.2011.11.069
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