Correlation between the optoelectronic properties and the structure of hydrogenated amorphous silicon-carbon films grown from a C2H2 gas source
- Author
- GIORGIS, F1 ; PIRRI, C. F1 ; TRESSO, E1 ; RAVA, P2
[1] Dipartimento di Fisica ed Unità dell' Istituto Nazionale per la Fisica della Materia del Politecnico, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
[2] Elettrorava S.p.A., via Don Sapino 176, Savonera, Torino, Italy - Source
Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1997, Vol 75, Num 4, pp 471-483 ; ref : 23 ref
- ISSN
- 1364-2812
- Scientific domain
- Condensed state physics
- Publisher
- Taylor & Francis, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition hydrogène Bande interdite Carbone composé Conductivité électrique Couche mince Energie activation Etat amorphe Etude expérimentale Matériau amorphe hydrogéné Mode opératoire Mode vibration Méthode PECVD Photoconductivité Préparation Règle Urbach Silicium composé Spectre IR C Si Règle Tauc a-Si1-xCx:H Composé minéral
- Keyword (en)
- Hydrogen additions Energy gap Carbon compounds Electric conductivity Thin films Activation energy Amorphous state Experimental study Amorphous hydrogenated material Operating mode Vibrational mode PECVD Photoconductivity Preparation Urbach rule Silicon compounds Infrared spectra Inorganic compounds
- Keyword (es)
- Método operatorio Modo de vibración Preparación Regla Urbach
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61J Amorphous semiconductors; glasses
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2618594
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1080/13642819708202332 
https://dx.doi.org/10.1080/13642819708202332
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