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Morphological control of MgxZn1―xO layers grown on Ga:ZnO/glass substrates for photovoltaics

Author
ZIQING DUAN1 ; YICHENG LU1 ; DU PASQUIER, Aurelien2
[1] Department of Electrical & Computer Engineering, Rutgers University, 94 Brett Road, Piscataway, NJ 08854, United States
[2] Department of Materials Science and Engineering, Rutgers University, 671 US Highway 1, North Brunswick, NJ 08902, United States
Conference title
The Proceedings of the 18th American Conference on Crystal Growth and Epitaxy (ACCGE-18 OMVPE-15), Monterey, CA, USA, 31 July - 05 August, 2011
Conference name
ACCGE-18 American Conference on Crystal Growth and Epitaxy (18 ; Monterey, California 2011-07-31) = OMVPE-15 US Biennial Workshop on Organometallic Vapor Phase Epitaxy (15 ; Monterey, California 2011-07-31)
Author (monograph)
QIU, S. Roger (Editor); BHAT, Raj (Editor); CANEAU, Catherine (Editor)
Source

Journal of crystal growth. 2012, Vol 352, Num 1, pp 190-193, 4 p ; ref : 16 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
A1. Nanostructures A1. Surface morphology A3. Metalorganic chemical vapor deposition B1. MgxZn1―xO alloy B2. Semiconducting II―VI materials B3. Solar cells
Keyword (fr)
Addition gallium Bande interdite Cellule solaire Composé ternaire Couche mince Couche tampon Dispositif photovoltaïque Dépendance température Gallium Jonction p n Morphologie surface Mécanisme croissance Méthode MOCVD Nanostructure Nucléation Oxyde de zinc Polymère Semiconducteur II-VI 6460Q 8110A 8115G 8460J MgxZn1-xO Substrat ZnO Substrat verre ZnO
Keyword (en)
Gallium addition Energy gap Solar cell Ternary compound Thin film Buffer layer Photovoltaic cell Temperature dependence Gallium p n junction Surface morphology Growth mechanism MOCVD Nanostructure Nucleation Zinc oxide Polymer II-VI semiconductors
Keyword (es)
Adición galio Banda prohibida Célula solar Compuesto ternario Capa fina Capa tampón Dispositivo fotovoltaico Galio Unión p n Mecanismo crecimiento Nanoestructura Nucleación Zinc óxido Polímero
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60D Equations of state, phase equilibria, and phase transitions / 001B60D60 General studies of phase transitions / 001B60D60Q Nucleation

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells

Discipline
Energy Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
26220064

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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