Effect of hetero-interfaces on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWs
- Author
- SHAOJUN MA1 ; YUNPENG WANG2 ; SODABANLU, Hassanet2 ; WATANABE, Kentaroh2 ; SUGIYAMA, Masakazu1 ; NAKANO, Yoshiaki1 2
[1] Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, Japan
[2] Research Center of Advance Science and Technology, The University of Tokyo, Japan - Conference title
- The Proceedings of the 18th American Conference on Crystal Growth and Epitaxy (ACCGE-18 OMVPE-15), Monterey, CA, USA, 31 July - 05 August, 2011
- Conference name
- ACCGE-18 American Conference on Crystal Growth and Epitaxy (18 ; Monterey, California 2011-07-31) = OMVPE-15 US Biennial Workshop on Organometallic Vapor Phase Epitaxy (15 ; Monterey, California 2011-07-31)
- Author (monograph)
- QIU, S. Roger (Editor); BHAT, Raj (Editor); CANEAU, Catherine (Editor)
- Source
Journal of crystal growth. 2012, Vol 352, Num 1, pp 245-248, 4 p ; ref : 18 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- A1. Surface structure A3. Metalorganic vapor phase epitaxy A3. Quantum wells B1. Gallium compounds B2. Semiconducting III―V materials
- Keyword (fr)
- Anisotropie Arsenic Arséniure d'indium Arséniure de gallium Commutation Composé du gallium Courbure Diffraction RX Epitaxie phase vapeur Facteur réflexion Gallium Phosphoarséniure Interface Mesure courbure Mécanisme croissance Méthode MOVPE Nanomatériau Pastille électronique Phosphore Phénomène transitoire Puits quantique multiple Puits quantique Semiconducteur III-V Spectre réflexion Structure surface 8107 8110A 8115K GaAsP InGaAs
- Keyword (en)
- Anisotropy Arsenic Indium arsenides Gallium arsenides Switching Gallium compounds Curvature XRD VPE Reflectivity Gallium Arsenides phosphides Interfaces Curvature measurement Growth mechanism MOVPE method Nanostructured materials Wafers Phosphorus Transients Multiple quantum well Quantum wells III-V semiconductors Reflection spectrum Surface structure
- Keyword (es)
- Fosfoarseniuro Mecanismo crecimiento Método MOVPE Pozo cuántico múltiple Espectro reflexión
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26220075
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2011.11.040 
https://dx.doi.org/10.1016/j.jcrysgro.2011.11.040
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