Light-Induced Hysteresis of In-Ga-Zn-O Thin-Film Transistors With Various Temperatures
- Author
- KUK, Seung-Hee1 ; LEE, Soo-Yeon1 ; KIM, Sun-Jae1 ; KIM, Binn2 3 ; PARK, Soo-Jeong3 ; KWON, Jang-Yeon4 ; HAN, Min-Koo1
[1] School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea, Republic of
[2] School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea, Republic of
[3] Research and Development Center, LG Display, Paju 413-811, Korea, Republic of
[4] School of Integrated Technology, Yonsei University, Inchoen 406-840, Korea, Republic of - Source
IEEE electron device letters. 2012, Vol 33, Num 9, pp 1279-1281, 3 p ; ref : 12 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Amorphous In―Ga―Zn―O thin-film transistors (a-IGZO TFTs) hysteresis light response
- Keyword (fr)
- Couche active Diélectrique Eclairement Lacune Matériau amorphe Oxygène Sous bande Transistor couche mince Zinc
- Keyword (en)
- Active layer Dielectric materials Illumination Vacancy Amorphous material Oxygen Subband Thin film transistor Zinc
- Keyword (es)
- Capa activa Dieléctrico Alumbrado Cavidad Material amorfo Oxígeno Subbanda Transistor capa delgada Zinc
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26323409
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2012.2205891 
https://dx.doi.org/10.1109/LED.2012.2205891
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