Modifying ALE grown In2O3 films by benzoyl fluoride pulses
- Author
- ASIKAINEN, T; RITALA, M1 ; LI, W.-M1 ; LAPPALAINEN, R2 ; LESKELÄ, M
[1] Department of Chemistry, P.O. Box 55, University of Helsinki, 00014 Helsinki, Finland
[2] Accelerator laboratory, P.O. Box 9, University of Helsinki, 00014 Helsinki, Finland - Conference title
- Atomic layer epitaxy and related surfaces processes
- Conference name
- ALE-4. International Symposium (4 ; Linz 1996-07-29)
- Author (monograph)
- SITTER, H (Editor)1 ; HEINRICH, H (Editor)1
[1] Johannes Kepler University, Linz, Austria - Source
Applied surface science. 1997, Vol 112, pp 231-235 ; ref : 26 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition fluor Couche mince Epitaxie Etude expérimentale Indium oxyde Matériau dopé Méthode couche atomique In O In2O3
- Keyword (en)
- Fluorine additions Thin films Epitaxy Experimental study Indium oxides Doped materials Atomic layer method
- Keyword (es)
- Método capa atómica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2632529
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0169-4332(96)00986-5 
https://dx.doi.org/10.1016/S0169-4332(96)00986-5
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