Compact Degradation Sensors for Monitoring NBTI and Oxide Degradation
- Author
- SINGH, Prashant1 ; KARL, Eric2 ; BLAAUW, David3 ; SYLVESTER, Dennis3
[1] Nvidia, Santa Clara, CA 80305, United States
[2] Intel, Hillsboro, OR 97124, United States
[3] University of Michigan, Ann Arbor, MI 48105, United States - Source
IEEE transactions on very large scale integration (VLSI) systems. 2012, Vol 20, Num 9, pp 1645-1655, 11 p ; ref : 30 ref
- ISSN
- 1063-8210
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- CMOS negative bias temperature instability (NBTI) oxide breakdown reliability sensors
- Keyword (fr)
- Capteur mesure Collecte donnée Conception compacte Contrainte thermique Couche oxyde Courant fuite Défaillance Dégradation Echelle grande Endommagement Fiabilité In situ Mesure température Modélisation Moniteur Monitorage Précision mesure Système commande Technologie MOS complémentaire 0707D Instabilité thermique de la polarisation
- Keyword (en)
- Measurement sensor Data gathering Compact design Thermal stress Oxide layer Leakage current Failures Degradation Large scale Damaging Reliability In situ Temperature measurement Modeling Monitor Monitoring Measurement accuracy Control system Complementary MOS technology Bias temperature instability
- Keyword (es)
- Captador medida Recolección dato Concepción compacta Tensión térmica Capa óxido Corriente escape Fallo Degradación Escala grande Deterioración Fiabilidad In situ Medida temperatura Modelización Monitor Monitoreo Precisión medida Sistema control Tecnología MOS complementario
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G07 General equipment and techniques / 001B00G07D Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Discipline
- Electronics Metrology
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26346800
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TVLSI.2011.2161784 
https://dx.doi.org/10.1109/TVLSI.2011.2161784
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