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A Simple Approach to Quantum Confinement in Tunneling Field-Effect Transistors

Author
PADILLA, J. L1 ; GAMIZ, F1 ; GODOY, A1
[1] Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, 18071 Granada, Spain
Source

IEEE electron device letters. 2012, Vol 33, Num 10, pp 1342-1344, 3 p ; ref : 14 ref

CODEN
EDLEDZ
ISSN
0741-3106
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
Band-to-band tunneling quantum confinement tunneling field-effect transistor (TFET)
Keyword (fr)
Autocohérence Bande conduction Bande valence Caractéristique transfert Confinement quantique Effet quantique Effet tunnel Equation Poisson Equation Schrödinger Injection porteur charge Loi Poisson Modèle 1 dimension Sous bande Transistor effet champ Transistor tunnel
Keyword (en)
Self consistency Conduction band Valence band Transfer characteristic Quantum confinement Quantum effect Tunnel effect Poisson equation Schrödinger equation Charge carrier injection Poisson distribution One dimensional model Subband Field effect transistor Tunnel transistors
Keyword (es)
Autocoherencia Banda conducción Banda valencia Característica transferencia Confinamiento cuántico Efecto cuántico Efecto túnel Ecuación Poisson Ecuación Schrödinger Inyección portador carga Ley Poisson Modelo 1 dimensión Subbanda Transistor efecto campo
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
26443113

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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