Correlation between surface microroughness of silicon oxide film and SiO2/Si interface structure
- Author
- OHASHI, M1 ; HATTORI, T1
[1] Department of Electrical & Electronic Engineering, Musashi Institute of Technology, 1-28-1 Taniazutsumi, Setagaya-ku, Tokyo 158, Japan - Source
Japanese journal of applied physics. 1997, Vol 36, Num 4A, pp L397-L399 ; 2 ; ref : 16 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé binaire Couche mince Etude expérimentale Hétérojonction Interface solide solide Matériau semiconducteur Microrugosité Microscopie force atomique Méthode couche atomique Oxydation Rayon X Silicium oxyde Silicium Spectrométrie photoélectron Structure interface Surface O Si Si SiO2 Composé minéral Non métal
- Keyword (en)
- Binary compounds Thin films Experimental study Heterojunctions Solid-solid interfaces Semiconductor materials Microroughness Atomic force microscopy Atomic layer method Oxidation X radiation Silicon oxides Silicon Photoelectron spectroscopy Interface structure Surfaces Inorganic compounds Nonmetals
- Keyword (es)
- Microrugosidad Método capa atómica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Pacs
- 6865 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2644630
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.36.L397 
https://dx.doi.org/10.1143/JJAP.36.L397
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