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Correlation between surface microroughness of silicon oxide film and SiO2/Si interface structure

Author
OHASHI, M1 ; HATTORI, T1
[1] Department of Electrical & Electronic Engineering, Musashi Institute of Technology, 1-28-1 Taniazutsumi, Setagaya-ku, Tokyo 158, Japan
Source

Japanese journal of applied physics. 1997, Vol 36, Num 4A, pp L397-L399 ; 2 ; ref : 16 ref

CODEN
JJAPA5
ISSN
0021-4922
Scientific domain
Crystallography; Optics; Condensed state physics; Physics; Plasma physics
Publisher
Japanese journal of applied physics, Tokyo
Publication country
Japan
Document type
Article
Language
English
Keyword (fr)
Composé binaire Couche mince Etude expérimentale Hétérojonction Interface solide solide Matériau semiconducteur Microrugosité Microscopie force atomique Méthode couche atomique Oxydation Rayon X Silicium oxyde Silicium Spectrométrie photoélectron Structure interface Surface O Si Si SiO2 Composé minéral Non métal
Keyword (en)
Binary compounds Thin films Experimental study Heterojunctions Solid-solid interfaces Semiconductor materials Microroughness Atomic force microscopy Atomic layer method Oxidation X radiation Silicon oxides Silicon Photoelectron spectroscopy Interface structure Surfaces Inorganic compounds Nonmetals
Keyword (es)
Microrugosidad Método capa atómica
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Pacs
6865 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2644630

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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