Size dependence of structural metastability in semiconductor nanocrystals
- Author
- CHEN, C.-C; HERHOLD, A. B; JOHNSON, C. S; ALIVISATOS, A. P
Department of Chemistry, University of California, Berkeley, United States
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States - Source
Science (Washington, D.C.). 1997, Vol 276, Num 5311, pp 398-401
- CODEN
- SCIEAS
- ISSN
- 0036-8075
- Scientific domain
- Multidisciplinary
- Publisher
- American Association for the Advancement of Science, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Cadmium Séléniure Composé binaire Etude expérimentale Hauteur barrière Nanocristal Phase métastable Semiconducteur Structure cristalline Transition phase Cd Se CdSe
- Keyword (en)
- Cadmium Selenides Binary compound Experimental study Barrier height Nanocrystal Metastable phase Semiconductor materials Crystalline structure Phase transitions
- Keyword (es)
- Cadmio Seleniuro Compuesto binario Estudio experimental Altura barrera Nanocristal Fase metastable Semiconductor(material) Estructura cristalina Transición fase
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2649386
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1126/science.276.5311.398 
https://dx.doi.org/10.1126/science.276.5311.398
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1126\/science.276.5311.398\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:73:\"Size dependence of structural metastability in semiconductor nanocrystals\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Science (Washington, D.C.)\";s:9:\"\u0000*\u0000stitle\";s:20:\"Science (Wash. D.C.)\";s:7:\"\u0000*\u0000date\";s:4:\"1997\";s:9:\"\u0000*\u0000volume\";s:3:\"276\";s:8:\"\u0000*\u0000issue\";s:4:\"5311\";s:8:\"\u0000*\u0000spage\";s:3:\"398\";s:8:\"\u0000*\u0000epage\";s:3:\"401\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0036-8075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"CHEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C.-C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"HERHOLD, A. B\";i:1;s:13:\"JOHNSON, C. S\";i:2;s:16:\"ALIVISATOS, A. P\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SCIEAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:73:\"Size dependence of structural metastability in semiconductor nanocrystals\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:51:\"American Association for the Advancement of Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1126\/science.276.5311.398\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:73:\"Size dependence of structural metastability in semiconductor nanocrystals\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Science (Washington, D.C.)\";s:9:\"\u0000*\u0000stitle\";s:20:\"Science (Wash. D.C.)\";s:7:\"\u0000*\u0000date\";s:4:\"1997\";s:9:\"\u0000*\u0000volume\";s:3:\"276\";s:8:\"\u0000*\u0000issue\";s:4:\"5311\";s:8:\"\u0000*\u0000spage\";s:3:\"398\";s:8:\"\u0000*\u0000epage\";s:3:\"401\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0036-8075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"CHEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C.-C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"HERHOLD, A. B\";i:1;s:13:\"JOHNSON, C. S\";i:2;s:16:\"ALIVISATOS, A. P\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SCIEAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:73:\"Size dependence of structural metastability in semiconductor nanocrystals\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:51:\"American Association for the Advancement of Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:28:\"10.1126\/science.276.5311.398\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1126\/science.276.5311.398\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:73:\"Size dependence of structural metastability in semiconductor nanocrystals\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Science (Washington, D.C.)\";s:9:\"\u0000*\u0000stitle\";s:20:\"Science (Wash. D.C.)\";s:7:\"\u0000*\u0000date\";s:4:\"1997\";s:9:\"\u0000*\u0000volume\";s:3:\"276\";s:8:\"\u0000*\u0000issue\";s:4:\"5311\";s:8:\"\u0000*\u0000spage\";s:3:\"398\";s:8:\"\u0000*\u0000epage\";s:3:\"401\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0036-8075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"CHEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C.-C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"HERHOLD, A. B\";i:1;s:13:\"JOHNSON, C. S\";i:2;s:16:\"ALIVISATOS, A. P\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SCIEAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:73:\"Size dependence of structural metastability in semiconductor nanocrystals\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:51:\"American Association for the Advancement of Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1126\/science.276.5311.398\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:73:\"Size dependence of structural metastability in semiconductor nanocrystals\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Science (Washington, D.C.)\";s:9:\"\u0000*\u0000stitle\";s:20:\"Science (Wash. D.C.)\";s:7:\"\u0000*\u0000date\";s:4:\"1997\";s:9:\"\u0000*\u0000volume\";s:3:\"276\";s:8:\"\u0000*\u0000issue\";s:4:\"5311\";s:8:\"\u0000*\u0000spage\";s:3:\"398\";s:8:\"\u0000*\u0000epage\";s:3:\"401\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0036-8075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"CHEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C.-C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"HERHOLD, A. B\";i:1;s:13:\"JOHNSON, C. S\";i:2;s:16:\"ALIVISATOS, A. P\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SCIEAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:73:\"Size dependence of structural metastability in semiconductor nanocrystals\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:51:\"American Association for the Advancement of Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1126\/science.276.5311.398\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:73:\"Size dependence of structural metastability in semiconductor nanocrystals\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Science (Washington, D.C.)\";s:9:\"\u0000*\u0000stitle\";s:20:\"Science (Wash. D.C.)\";s:7:\"\u0000*\u0000date\";s:4:\"1997\";s:9:\"\u0000*\u0000volume\";s:3:\"276\";s:8:\"\u0000*\u0000issue\";s:4:\"5311\";s:8:\"\u0000*\u0000spage\";s:3:\"398\";s:8:\"\u0000*\u0000epage\";s:3:\"401\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0036-8075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"CHEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C.-C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"HERHOLD, A. B\";i:1;s:13:\"JOHNSON, C. S\";i:2;s:16:\"ALIVISATOS, A. P\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SCIEAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:73:\"Size dependence of structural metastability in semiconductor nanocrystals\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:51:\"American Association for the Advancement of Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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