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Computer simulation of stress induced dislocation multiplication in large-diameter silicon wafer in high-temperature device processing

Author
SHIMIZU, H1 ; SUDOU, D2 ; SATOH, T3 ; SAITOU, S2
[1] Semiconductor & Integrated Circuits Division, Hitachi Ltd., Josuihon-cho, Kodaira, Tokyo 187, Japan
[2] Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1, Hibarigaoka, Tempaku-cho, Toyohashi 441, Japan
[3] Hitachi ULSI Engineering Corp., Josuihon-cho, Kodaira, Tokyo 187, Japan
Source

Materials transactions - JIM. 1997, Vol 38, Num 1, pp 69-77 ; ref : 35 ref

ISSN
0916-1821
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Polymers, paint and wood industries
Publisher
Japan Institute of Metals, Sendai
Publication country
Japan
Document type
Article
Language
English
Keyword (fr)
Application Cission réduite critique Dislocation Dépendance température Fabrication microélectronique Glissement Limite élasticité Matériau semiconducteur Microdéfaut Méthode élément fini Phénomène critique Silicium Thermoélasticité Traitement thermique Si
Keyword (en)
Application Critical resolved shear stress Dislocations Temperature dependence Microelectronic fabrication Slip Yield strength Semiconductor materials Microdefect Finite element method Critical phenomena Silicon Thermoelasticity Heat treatments
Keyword (es)
Aplicación Fabricación microeléctrica Microdefecto
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60B Mechanical and acoustical properties of condensed matter / 001B60B20 Mechanical properties of solids / 001B60B20D Elasticity, elastic constants

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits

Pacs
6220D Elasticity, elastic constants

Pacs
8540 Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2652045

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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