Computer simulation of stress induced dislocation multiplication in large-diameter silicon wafer in high-temperature device processing
- Author
- SHIMIZU, H1 ; SUDOU, D2 ; SATOH, T3 ; SAITOU, S2
[1] Semiconductor & Integrated Circuits Division, Hitachi Ltd., Josuihon-cho, Kodaira, Tokyo 187, Japan
[2] Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1, Hibarigaoka, Tempaku-cho, Toyohashi 441, Japan
[3] Hitachi ULSI Engineering Corp., Josuihon-cho, Kodaira, Tokyo 187, Japan - Source
Materials transactions - JIM. 1997, Vol 38, Num 1, pp 69-77 ; ref : 35 ref
- Publisher
- Japan Institute of Metals, Sendai
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Application Cission réduite critique Dislocation Dépendance température Fabrication microélectronique Glissement Limite élasticité Matériau semiconducteur Microdéfaut Méthode élément fini Phénomène critique Silicium Thermoélasticité Traitement thermique Si
- Keyword (en)
- Application Critical resolved shear stress Dislocations Temperature dependence Microelectronic fabrication Slip Yield strength Semiconductor materials Microdefect Finite element method Critical phenomena Silicon Thermoelasticity Heat treatments
- Keyword (es)
- Aplicación Fabricación microeléctrica Microdefecto
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60B Mechanical and acoustical properties of condensed matter / 001B60B20 Mechanical properties of solids / 001B60B20D Elasticity, elastic constants
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2652045
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.2320/matertrans1989.38.69 
https://dx.doi.org/10.2320/matertrans1989.38.69
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