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A New Quasi-2-D Threshold Voltage Model for Short-Channel Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs

Author
CHIANG, Te-Kuang1
[1] Advanced Devices Simulation Laboratory, Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, Province of China
Source

I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 11, pp 3127-3129, 3 p ; ref : 10 ref

CODEN
IETDAI
ISSN
0018-9383
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
JL cylindrical surrounding gate (JLCSG) MOSFETs Junctionless (JL) cylindrical quasi-2-D scaling equation threshold voltage
Keyword (fr)
Canal court Configuration cylindrique Couche oxyde Epaisseur Evaluation performance Forme cylindrique Oxyde de silicium Seuil tension Simulateur Technologie MOS Transistor MOSFET Transistor multigrille SiO2 Composé IV-VI
Keyword (en)
Short channel Cylindrical configuration Oxide layer Thickness Performance evaluation Cylindrical shape Silicon oxides Voltage threshold Simulator MOS technology MOSFET Multiple gate transistor IV-VI compound
Keyword (es)
Canal corto Configuración cilíndrica Capa óxido Espesor Evaluación prestación Forma cilíndrica Umbral tensión Simulador Tecnología MOS Transistor de rejilla múltiple Compuesto IV-VI
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
26544363

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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