In-situ Raman spectroscopy used to study and control the initial growth phase of microcrystalline absorber layers for thin-film silicon solar cells
- Author
- MUTHMANN, Stefan1 ; KÖHLER, Florian1 ; MEIER, Matthias1 ; HÜLSBECK, Markus1 ; CARIUS, Reinhard1 ; GORDIJN, Aad1
[1] IEK5-Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany - Conference title
- Proceedings of the 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), Nara, Japan, August 21-26, 2011
- Conference name
- ICANS 24 International Conference on Amorphous and Nanocrystalline Semiconductors (24 ; Nara 2011-08-21)
- Author (monograph)
- MIYAZAKI, Seiichi (Editor)1 ; TANAKA, Keiji (Editor)2 ; HOSONO, Hideo (Editor)3 ; FUJIWARA, Hiroyuki (Editor)4 ; HIGASHI, Seiichiro (Editor)5
[1] Graduate School of Engineering, Nagoya University, Nagoya, Aichi, Japan
[2] Graduate School of Engineering, Hokkaido University, Sapporo, Hokkaido, Japan
[3] Frontier Research Center, Tokyo Institute of Technology, Yokohama, Kanagawa, Japan
[4] Graduate School of Engineering, Gifu University, Gifu, Gifu, Japan
[5] Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-hiroshima, Hiroshima, Japan - Source
Journal of non-crystalline solids. 2012, Vol 358, Num 17, pp 1970-1973, 4 p ; ref : 23 ref
- CODEN
- JNCSBJ
- ISSN
- 0022-3093
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Condensed state physics
- Publisher
- Elsevier, Oxford
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Author keyword
- In-situ Microcrystalline silicon PECVD Raman spectroscopy
- Keyword (fr)
- Addition phosphore Cellule solaire Condition initiale Cristallinité Germe cristallin Matériau amorphe Microcristal Monitorage Mécanisme croissance Méthode PECVD Silicium Spectre Raman Spectrométrie Raman Structure lamellaire 6855A 8115G 8460J μc-Si:H
- Keyword (en)
- Phosphorus addition Solar cell Initial condition Crystallinity Crystal seed Amorphous material Microcrystal Monitoring Growth mechanism PECVD Silicon Raman spectrum Raman spectrometry Lamellar structure
- Keyword (es)
- Adición fósforo Célula solar Condición inicial Cristalinidad Germen cristalino Material amorfo Microcristal Monitoreo Mecanismo crecimiento Silicio Espectro Raman Espectrometría Raman Estructura lamelar
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells
- Discipline
- Energy Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26577181
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jnoncrysol.2011.12.061 
https://dx.doi.org/10.1016/j.jnoncrysol.2011.12.061
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:32:\"10.1016\/j.jnoncrysol.2011.12.061\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:147:\"In-situ Raman spectroscopy used to study and control the initial growth phase of microcrystalline absorber layers for thin-film silicon solar cells\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:3:\"358\";s:8:\"\u0000*\u0000issue\";s:2:\"17\";s:8:\"\u0000*\u0000spage\";s:4:\"1970\";s:8:\"\u0000*\u0000epage\";s:4:\"1973\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"MUTHMANN\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Stefan\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:16:\"K\u00d6HLER, Florian\";i:1;s:15:\"MEIER, Matthias\";i:2;s:17:\"H\u00dcLSBECK, Markus\";i:3;s:16:\"CARIUS, Reinhard\";i:4;s:12:\"GORDIJN, Aad\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:140:\"Proceedings of the 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), Nara, Japan, August 21-26, 2011\";s:8:\"\u0000*\u0000title\";s:147:\"In-situ Raman spectroscopy used to study and control the initial growth phase of microcrystalline absorber layers for thin-film silicon solar cells\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:32:\"10.1016\/j.jnoncrysol.2011.12.061\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:147:\"In-situ Raman spectroscopy used to study and control the initial growth phase of microcrystalline absorber layers for thin-film silicon solar cells\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:3:\"358\";s:8:\"\u0000*\u0000issue\";s:2:\"17\";s:8:\"\u0000*\u0000spage\";s:4:\"1970\";s:8:\"\u0000*\u0000epage\";s:4:\"1973\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"MUTHMANN\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Stefan\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:16:\"K\u00d6HLER, Florian\";i:1;s:15:\"MEIER, Matthias\";i:2;s:17:\"H\u00dcLSBECK, Markus\";i:3;s:16:\"CARIUS, Reinhard\";i:4;s:12:\"GORDIJN, Aad\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:140:\"Proceedings of the 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), Nara, Japan, August 21-26, 2011\";s:8:\"\u0000*\u0000title\";s:147:\"In-situ Raman spectroscopy used to study and control the initial growth phase of microcrystalline absorber layers for thin-film silicon solar cells\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:32:\"10.1016\/j.jnoncrysol.2011.12.061\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:32:\"10.1016\/j.jnoncrysol.2011.12.061\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:147:\"In-situ Raman spectroscopy used to study and control the initial growth phase of microcrystalline absorber layers for thin-film silicon solar cells\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:3:\"358\";s:8:\"\u0000*\u0000issue\";s:2:\"17\";s:8:\"\u0000*\u0000spage\";s:4:\"1970\";s:8:\"\u0000*\u0000epage\";s:4:\"1973\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"MUTHMANN\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Stefan\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:16:\"K\u00d6HLER, Florian\";i:1;s:15:\"MEIER, Matthias\";i:2;s:17:\"H\u00dcLSBECK, Markus\";i:3;s:16:\"CARIUS, Reinhard\";i:4;s:12:\"GORDIJN, Aad\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:140:\"Proceedings of the 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), Nara, Japan, August 21-26, 2011\";s:8:\"\u0000*\u0000title\";s:147:\"In-situ Raman spectroscopy used to study and control the initial growth phase of microcrystalline absorber layers for thin-film silicon solar cells\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:32:\"10.1016\/j.jnoncrysol.2011.12.061\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:147:\"In-situ Raman spectroscopy used to study and control the initial growth phase of microcrystalline absorber layers for thin-film silicon solar cells\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:3:\"358\";s:8:\"\u0000*\u0000issue\";s:2:\"17\";s:8:\"\u0000*\u0000spage\";s:4:\"1970\";s:8:\"\u0000*\u0000epage\";s:4:\"1973\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"MUTHMANN\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Stefan\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:16:\"K\u00d6HLER, Florian\";i:1;s:15:\"MEIER, Matthias\";i:2;s:17:\"H\u00dcLSBECK, Markus\";i:3;s:16:\"CARIUS, Reinhard\";i:4;s:12:\"GORDIJN, Aad\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:140:\"Proceedings of the 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), Nara, Japan, August 21-26, 2011\";s:8:\"\u0000*\u0000title\";s:147:\"In-situ Raman spectroscopy used to study and control the initial growth phase of microcrystalline absorber layers for thin-film silicon solar cells\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:32:\"10.1016\/j.jnoncrysol.2011.12.061\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:147:\"In-situ Raman spectroscopy used to study and control the initial growth phase of microcrystalline absorber layers for thin-film silicon solar cells\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:3:\"358\";s:8:\"\u0000*\u0000issue\";s:2:\"17\";s:8:\"\u0000*\u0000spage\";s:4:\"1970\";s:8:\"\u0000*\u0000epage\";s:4:\"1973\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"MUTHMANN\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Stefan\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:16:\"K\u00d6HLER, Florian\";i:1;s:15:\"MEIER, Matthias\";i:2;s:17:\"H\u00dcLSBECK, Markus\";i:3;s:16:\"CARIUS, Reinhard\";i:4;s:12:\"GORDIJN, Aad\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:140:\"Proceedings of the 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), Nara, Japan, August 21-26, 2011\";s:8:\"\u0000*\u0000title\";s:147:\"In-situ Raman spectroscopy used to study and control the initial growth phase of microcrystalline absorber layers for thin-film silicon solar cells\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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