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Recent Results on Growth of (211)B CdTe on (211 )Si with Intermediate Ge and ZnTe Buffer Layers by Metalorganic Vapor-Phase Epitaxy

Author
SHINTRI, Shashidhar1 ; SUNIL RAO2 ; WIJEWARNASURIYA, Priyalal3 ; TRIVEDI, Sudhir4 ; BHAT, Ishwara2
[1] Department of Engineering Science, Rensselaer Polytechnic Institute, Troy, NY 12180, United States
[2] Department of Electrical, Computer & Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, United States
[3] U.S. Army Research Laboratory, Adelphi, MD 20783, United States
[4] Brimrose Corporation of America, Sparks, MD 21152, United States
Conference title
2011 U.S. Workshop on the Physics and Chemistry of II-VI Materials
Conference name
2011 U.S. Workshop on the Physics and Chemistry of II-VI Materials (30 ; Chicago, IL 2011-10-04)
Author (monograph)
SIVANANTHAN, S (Editor)1 ; DHAR, N. K (Editor)2 ; ANTER, Y (Editor)1
American Physical Society (APS), United States (Organiser of meeting)
[1] Microphysics Laboratory, University of Illinois at Chicago, 845 W. Taylor St., Chicago, IL 60607, United States
[2] Defense Advanced Research Projects Agency, 3701 North Fairfax Drive, Arlington, VA 22203-1714, United States
Source

Journal of electronic materials. 2012, Vol 41, Num 10, pp 2824-2827, 4 p ; ref : 9 ref

CODEN
JECMA5
ISSN
0361-5235
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Springer, Heidelberg
Publication country
Germany
Document type
Conference Paper
Language
English
Author keyword
(211)Si Cadmium telluride epitaxy metalorganic vapor-phase epitaxy (MOVPE)
Keyword (fr)
Cadmium Condition opératoire Couche mince Couche tampon Couche épitaxique Diffraction RX Epitaxie phase vapeur Germanium Microscopie force atomique Microscopie électronique balayage Mécanisme croissance Méthode MOVPE Paramètre thermique Perfection cristalline Pression partielle Précurseur Recuit thermique Rugosité Semiconducteur II-VI Silicium Tellurure de cadmium Tellurure de zinc 6855A 8115K CdTe Si Substrat silicium Te Zn ZnTe
Keyword (en)
Cadmium Operating conditions Thin films Buffer layer Epitaxial layers XRD VPE Germanium Atomic force microscopy Scanning electron microscopy Growth mechanism MOVPE method Thermal parameter Crystal perfection Partial pressure Precursor Thermal annealing Roughness II-VI semiconductors Silicon Cadmium tellurides Zinc tellurides
Keyword (es)
Condición operatoria Capa tampón Mecanismo crecimiento Método MOVPE Parámetro térmico Perfección cristalina Recocido térmico
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
26624708

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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