Pascal and Francis Bibliographic Databases

Help

Export

Selection :

Permanent link
http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26675351

New Aspects of Si-and Ge-based Materials and Devices

Author
BRACHT, Hartmut (Editor) 1 ; IMPELLIZZERI, Giuliana (Editor) 2
[1] University of Münster, Germany
[2] IMM-CNR and University of Catania, Italy
Source

Materials science in semiconductor processing. 2012, Vol 15, Num 6, 159 p. ; ref : dissem

ISSN
1369-8001
Scientific domain
Electronics; Condensed state physics
Publisher
Elsevier, Kidlington
Publication country
United Kingdom
Document type
Serial Issue
Language
English
Keyword (fr)
Dispositif semiconducteur Germanium Semiconducteur Silicium
Keyword (en)
Semiconductor device Germanium Semiconductor materials Silicon
Keyword (es)
Dispositivo semiconductor Germanio Semiconductor(material) Silicio
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
26675351

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Searching the Web