New Aspects of Si-and Ge-based Materials and Devices
- Author
- BRACHT, Hartmut (Editor)
1 ; IMPELLIZZERI, Giuliana (Editor)
2
[1] University of Münster, Germany
[2] IMM-CNR and University of Catania, Italy - Source
Materials science in semiconductor processing. 2012, Vol 15, Num 6, 159 p. ; ref : dissem
- ISSN
- 1369-8001
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Serial Issue
- Language
- English
- Keyword (fr)
- Dispositif semiconducteur Germanium Semiconducteur Silicium
- Keyword (en)
- Semiconductor device Germanium Semiconductor materials Silicon
- Keyword (es)
- Dispositivo semiconductor Germanio Semiconductor(material) Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26675351
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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