The fabrication and the reliability of poly-Si MOSFETs using ultra-thin high-K/metal-gate stack
- Author
- LEE, M. H1 ; CHEN, K.-J1
[1] Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan, Province of China - Source
Solid-state electronics. 2013, Vol 79, pp 244-247, 4 p ; ref : 13 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- 3D-ICs High-K Poly-Si Reliability
- Keyword (fr)
- Canal court Canal long Circuit intégré monolithique Circuit intégré Contrainte thermique Couche ultramince Diélectrique permittivité élevée Fiabilité Grille transistor Joint grain Multicouche Porteur chaud Procédé fabrication Résistance parasite Seuil tension Silicium Stabilité thermique Structure 3 dimensions Technologie MOS Transistor MOSFET Verre Effet DIBL Instabilité thermique de la polarisation
- Keyword (en)
- Short channel Long channel Monolithic integrated circuit Integrated circuit Thermal stress Ultrathin films High k dielectric Reliability Transistor gate Grain boundary Multiple layer Hot carrier Manufacturing process Parasitic resistance Voltage threshold Silicon Thermal stability Three dimensional structure MOS technology MOSFET Glass DIBL effect Bias temperature instability
- Keyword (es)
- Canal corto Canal largo Circuito integrado monolítico Circuito integrado Tensión térmica Dieléctrico alta constante dieléctrica Fiabilidad Rejilla transistor Limite grano Capa múltiple Portador caliente Procedimiento fabricación Resistencia parásita Umbral tensión Silicio Estabilidad térmica Estructura 3 dimensiones Tecnología MOS Vidrio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26680229
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2012.07.009 
https://dx.doi.org/10.1016/j.sse.2012.07.009
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