Correlations between the thermoelectric power and hall effect of Sn- or Ge-doped In2O3 polycrystalline ceramics
- Author
- MARCEL, C1 ; SALARDENNE, J1 ; HUANG, S. Y2 ; CAMPET, G2 ; PORTIER, J2
[1] Laboratoire d'Etudes pour la Microélectronique, Université de Bordeaux I, 351 Cours de la Libération, 33405 Talence, France
[2] Laboratoire de Chimie du Solide du CNRS, Université de Bordeaux 1, 351 Cours de la Libération, 33405 Talence, France - Source
Active and passive electronic components. 1997, Vol 19, Num 4, pp 217-223 ; ref : 16 ref
- CODEN
- APECEZ
- ISSN
- 0882-7516
- Scientific domain
- Electronics
- Publisher
- Taylor and Francis, Abingdon
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Céramique Effet Hall Etude comparative Polycristal Pouvoir thermoélectrique
- Keyword (en)
- Ceramic materials Hall effect Comparative study Polycrystal Thermoelectric power
- Keyword (es)
- Cerámica Efecto Hall Estudio comparativo Policristal Poder termoeléctrico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2669335
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1155/1997/89056 
https://dx.doi.org/10.1155/1997/89056
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