High Mobility Field Effect Transistors Based on Macroscopically Oriented Regioregular Copolymers
- Author
- TSENG, Hsin-Rong1 ; LEI YING1 ; HSU, Ben B. Y1 ; PEREZ, Louis A2 ; TAKACS, Christopher J3 ; BAZAN, Guillermo C1 ; HEEGER, Alan J1
[1] Center for Polymers and Organic Solids, University of California—Santa Barbara, Santa Barbara, California 93106, United States
[2] Department of Materials, and, University of California—Santa Barbara, Santa Barbara, California 93106, United States
[3] Department of Physics, University of California—Santa Barbara, Santa Barbara, California 93106, United States - Source
Nano letters (Print). 2012, Vol 12, Num 12, pp 6353-6357, 5 p ; ref : 31 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Anisotropie Champ intense Copolymère Masse moléculaire Mobilité trou Polymère conjugué Pyridine Recuit Semiconducteur organique Transistor effet champ 8530P 8530T
- Keyword (en)
- Anisotropy High field Copolymer Molecular mass Hole mobility Conjugated polymer Pyridine Annealing Organic semiconductors Field effect transistor
- Keyword (es)
- Anisotropía Campo intenso Copolímero Masa molecular Movilidad agujero Polímero conjugado Piridina Recocido Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26748854
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl303612z 
https://dx.doi.org/10.1021/nl303612z
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