InGaP/GaAs sub-square-micron emitter HBT with fmax >100 GHz
- Author
- HIRATA, K1 ; TANOUE, T2 ; MASUDA, H2 ; UCHIYAMA, H2 ; TERANO, A2
[1] Hitachi ULSI Engineering Corporation, 5-20-1, Josuihon-cho, Kodaira, Tokyo 187, Japan
[2] Central Research Laboratory, Hitachi Ltd., 1-280, Higashi-Koigakubo, Kokubunji, Tokyo 185, Japan - Conference title
- Solid state devices and materials
- Conference name
- 1996 International Conference on Solid State Devices and Materials (SSDM'96) (SSDM'96) (Yokohama 1996-08-26)
- Author (monograph)
- ARAKAWA, Yasuhiko (Editor); ARIMOTO, Yoshihiro (Editor); NATORI, Kenji (Editor); ONABE, Kentaro (Editor); SHIBATA, Tadashi (Editor); SUEMUNE, Ikuo (Editor); TABE, Michiharu (Editor); TSUBOUCHI, Kazuo (Editor); YOKOYAMA, Naoki (Editor); YOSHIMI, Makoto (Editor); HATTORI, Takeo (Editor); HIRAYAMA, Yoshiro (Editor); ISHIBASHI, Akira (Editor); KASAHARA, Kenichi (Editor); KONAGAI, Makoto (Editor); KOYANAGI, Mitsumasa (Editor); MATSUMOTO, Kazuhiko (Editor); MIYAZAKI, Seiichi (Editor)
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor) - Source
Japanese journal of applied physics. 1997, Vol 36, Num 3B, pp 1799-1803 ; 1 ; ref : 16 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Composé III-V Composé binaire Composé ternaire Etude expérimentale Fabrication microélectronique Gallium Arséniure Gallium Phosphure Indium Phosphure Transistor bipolaire Transistor hyperfréquence Transistor hétérojonction As Ga Ga In P GaAs InGaP
- Keyword (en)
- III-V compound Binary compound Ternary compound Experimental study Microelectronic fabrication Gallium Arsenides Gallium Phosphides Indium Phosphides Bipolar transistor Microwave transistor Heterojunction transistor
- Keyword (es)
- Compuesto III-V Compuesto binario Compuesto ternario Estudio experimental Fabricación microeléctrica Galio Arseniuro Galio Fosfuro Indio Fosfuro Transistor bipolar Transistor hiperfrecuencia Transistor heterounión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2681651
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.36.1799 
https://dx.doi.org/10.1143/JJAP.36.1799
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