The Second-Generation of HiSIM_HV Compact Models for High-Voltage MOSFETs : ADVANCED MODELING OF POWER DEVICES AND THEIR APPLICATIONS
- Author
- JÜRGEN MATTAUSCH, Hans1 ; MIYAKE, Masataka2 ; IIZUKA, Takahiro1 ; KIKUCHIHARA, Hideyuki2 ; MIURA-MATTAUSCH, Mitiko1
[1] Graduate School of Advanced Sciences of Matter, Hiroshima University, Hiroshima 739-8530, Japan
[2] HiSIM Research Center, Hiroshima University, Hiroshima 739-8530, Japan - Source
I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 653-661, 9 p ; ref : 28 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- -Compact model drift region high-voltage MOSFET (HVMOS) resistor model scalability self-heating surface potential
- Keyword (fr)
- Autoéchauffement Capacité électrique Codage Comportement thermique Conception compacte Courant fuite Densité porteur charge Double diffusion Equation Poisson Extensibilité Haute tension Implémentation Ionisation choc Modélisation Potentiel surface Résistance électrique Technologie MOS Tension drain Transistor MOS Transistor MOSFET
- Keyword (en)
- Self heating Capacitance Coding Thermal behavior Compact design Leakage current Charge carrier density Double diffusion Poisson equation Scalability High voltage Implementation Impact ionization Modeling Surface potential Resistor MOS technology Drain voltage MOS transistor MOSFET
- Keyword (es)
- Autocalentamiento Capacitancia Codificación Comportamiento térmico Concepción compacta Corriente escape Concentración portador carga Doble difusión Ecuación Poisson Estensibilidad Alta tensión Implementación Ionización choque Modelización Potencial superficie Resistencia eléctrica(componente) Tecnología MOS Tensión dren Transistor MOS
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26854132
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2012.2225836 
https://dx.doi.org/10.1109/TED.2012.2225836
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