Quantification of Ge in Si1-xGex by using low-energy Cs+ and O2+ ion beams
- Autor
- PURETI, Rathaiah1 2 ; VANDERVORST, W1 2
[1] Instituut Kern-en Stralings fysika, K.U. Leuven, 3001, Leuven, Belgium
[2] IMEC, Kapeldreef 75, 3001 Leuven, Belgium - Titulo de la conferencia
- Proceedings of the Eighteenth International Conference on Secondary Ion Mass Spectrometry, SIMS XVIII, Riva Del Garda, Trento, Italy, September 18-23, 2011
- Nombre de la conferencia
- Proceedings of the Eighteenth International Conference on Secondary Ion Mass Spectrometry, SIMS XVIII (18 ; Trento 2011-09-18)
- Autor ( monografía)
- SIMS Italian Workgroup, Italy (Organiser of meeting)
The Fondazione Bruno Kessler, Trento, Italy (Organiser of meeting) - Fuente
Surface and interface analysis. 2013, Vol 45, Num 1, pp 402-405, 4 p ; ref : 11 ref
- Editor
- Wiley, Chichester
- País de la publicación
- United Kingdom
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave de autor
- SIMS SiGe calibration curve intensity ratios matrix effects sputter yield
- Palabra clave (fr)
- Alliage Ge Si Alliage binaire Alliage semiconducteur Angle incidence Composé minéral Césium Etalonnage Faisceau ion Germanium Oxygène SIMS Silicium Cs Ge Si O Si1-xGex Si SiGe
- Palabra clave (in)
- Ge-Si alloys Binary alloys Semiconductor alloys Incidence angle Inorganic compounds Cesium Calibration Ion beams Germanium Oxygen SIMS Silicon
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70I Electron and ion emission by liquids and solids; impact phenomena / 001B70I20 Impact phenomena (including electron spectra and sputtering) / 001B70I20R Atomic, molecular, and ion beam impact and interactions with surfaces
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 26875422
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Acceso al documento
Install on your browser
DOI
10.1002/sia.5049 
https://dx.doi.org/10.1002/sia.5049
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1002\/sia.5049\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"Quantification of Ge in Si1-xGex by using low-energy Cs+ and O2+ ion beams\";s:9:\"\u0000*\u0000jtitle\";s:30:\"Surface and interface analysis\";s:9:\"\u0000*\u0000stitle\";s:20:\"Surf. interface anal\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"45\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"402\";s:8:\"\u0000*\u0000epage\";s:3:\"405\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0142-2421\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"PURETI\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Rathaiah\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:14:\"VANDERVORST, W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SIANDQ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:155:\"Proceedings of the Eighteenth International Conference on Secondary Ion Mass Spectrometry, SIMS XVIII, Riva Del Garda, Trento, Italy, September 18-23, 2011\";s:8:\"\u0000*\u0000title\";s:74:\"Quantification of Ge in Si1-xGex by using low-energy Cs+ and O2+ ion beams\";s:8:\"\u0000*\u0000place\";s:10:\"Chichester\";s:6:\"\u0000*\u0000pub\";s:5:\"Wiley\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Panist
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1002\/sia.5049\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"Quantification of Ge in Si1-xGex by using low-energy Cs+ and O2+ ion beams\";s:9:\"\u0000*\u0000jtitle\";s:30:\"Surface and interface analysis\";s:9:\"\u0000*\u0000stitle\";s:20:\"Surf. interface anal\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"45\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"402\";s:8:\"\u0000*\u0000epage\";s:3:\"405\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0142-2421\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"PURETI\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Rathaiah\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:14:\"VANDERVORST, W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SIANDQ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:155:\"Proceedings of the Eighteenth International Conference on Secondary Ion Mass Spectrometry, SIMS XVIII, Riva Del Garda, Trento, Italy, September 18-23, 2011\";s:8:\"\u0000*\u0000title\";s:74:\"Quantification of Ge in Si1-xGex by using low-energy Cs+ and O2+ ion beams\";s:8:\"\u0000*\u0000place\";s:10:\"Chichester\";s:6:\"\u0000*\u0000pub\";s:5:\"Wiley\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Istex
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:16:\"10.1002\/sia.5049\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Acceso mediante Unpaywall
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1002\/sia.5049\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"Quantification of Ge in Si1-xGex by using low-energy Cs+ and O2+ ion beams\";s:9:\"\u0000*\u0000jtitle\";s:30:\"Surface and interface analysis\";s:9:\"\u0000*\u0000stitle\";s:20:\"Surf. interface anal\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"45\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"402\";s:8:\"\u0000*\u0000epage\";s:3:\"405\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0142-2421\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"PURETI\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Rathaiah\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:14:\"VANDERVORST, W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SIANDQ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:155:\"Proceedings of the Eighteenth International Conference on Secondary Ion Mass Spectrometry, SIMS XVIII, Riva Del Garda, Trento, Italy, September 18-23, 2011\";s:8:\"\u0000*\u0000title\";s:74:\"Quantification of Ge in Si1-xGex by using low-energy Cs+ and O2+ ion beams\";s:8:\"\u0000*\u0000place\";s:10:\"Chichester\";s:6:\"\u0000*\u0000pub\";s:5:\"Wiley\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Europe PubMed Central
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1002\/sia.5049\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"Quantification of Ge in Si1-xGex by using low-energy Cs+ and O2+ ion beams\";s:9:\"\u0000*\u0000jtitle\";s:30:\"Surface and interface analysis\";s:9:\"\u0000*\u0000stitle\";s:20:\"Surf. interface anal\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"45\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"402\";s:8:\"\u0000*\u0000epage\";s:3:\"405\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0142-2421\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"PURETI\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Rathaiah\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:14:\"VANDERVORST, W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SIANDQ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:155:\"Proceedings of the Eighteenth International Conference on Secondary Ion Mass Spectrometry, SIMS XVIII, Riva Del Garda, Trento, Italy, September 18-23, 2011\";s:8:\"\u0000*\u0000title\";s:74:\"Quantification of Ge in Si1-xGex by using low-energy Cs+ and O2+ ion beams\";s:8:\"\u0000*\u0000place\";s:10:\"Chichester\";s:6:\"\u0000*\u0000pub\";s:5:\"Wiley\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante arXiv
