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The Effect of d-orbital Electrons of Transition Metals on the Electronic and Magnetic Properties of GaN:TM (TM: Cr, Mn, Fe, Co)

Author
MANSOURI, E1 ; IZADIFARD, M1 ; GHAZI, M. E1
[1] Physics Department. Shahrood University of Technology, P.O. Box 316, Shahrood, Iran, Islamic Republic of
Conference name
International Conference on Nanoscale Magnetism (ICNM) (ICNM) (2 ; Gebze-Istanbul 2010-09-28)
Source

Journal of superconductivity and novel magnetism. 2012, Vol 25, Num 8, pp 2719-2722, 4 p ; ref : 18 ref

ISSN
1557-1939
Scientific domain
Electronics; Condensed state physics
Publisher
Springer, New York, NY
Publication country
United States
Document type
Conference Paper
Language
English
Author keyword
Diluted magnetic semiconductors Magnetic properties Plane wave pseudopotential Spintronic
Keyword (fr)
Addition métal transition Antiferromagnétisme Densité état électron Electronique spin Ferromagnétisme Impureté magnétique Matériau dopé Matériau ferromagnétique Moment magnétique Méthode fonctionnelle densité Méthode pseudopotentiel Nitrure de gallium Propriété magnétique Pseudopotentiel Semiconducteur semimagnétique 7550P GaN
Keyword (en)
Transition element additions Antiferromagnetism Electronic density of states Spintronics Ferromagnetism Magnetic impurities Doped materials Ferromagnetic materials Magnetic moments Density functional method Pseudopotential methods Gallium nitride Magnetic properties Pseudopotential Semimagnetic semiconductors
Keyword (es)
Electrónica de espin Galio nitruro
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70E Magnetic properties and materials / 001B70E50 Studies of specific magnetic materials / 001B70E50P Magnetic semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
26886663

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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