Cross-sectional transmission electron microscope studies on intrinsic breakdown spots of thin gate oxides
- Author
- IKEDA, S1 ; OKIHARA, M1 ; UCHIDA, H1 ; HIRASHITA, N1
[1] VLSI R&D Center, Oki Electric Industry Co., Ltd., Higashi-Asakawa, Hachioji, Tokyo 1930, Japan - Source
Japanese journal of applied physics. 1997, Vol 36, Num 5A, pp 2561-2564 ; 1 ; ref : 15 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Circuit intégré Disruption thermique Etude expérimentale Etude transversale Fiabilité Microscopie électronique transmission Oxyde Silicium Technologie MOS
- Keyword (en)
- Integrated circuit Thermal breakdown Experimental study Cross sectional study Reliability Transmission electron microscopy Oxides Silicon MOS technology
- Keyword (es)
- Circuito integrado Disrupción térmica Estudio experimental Estudio transversal Fiabilidad Microscopía electrónica transmisión Óxido Silicio Tecnología MOS
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03B Testing, measurement, noise and reliability
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2690018
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.36.2561 
https://dx.doi.org/10.1143/JJAP.36.2561
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