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Cross-sectional transmission electron microscope studies on intrinsic breakdown spots of thin gate oxides

Author
IKEDA, S1 ; OKIHARA, M1 ; UCHIDA, H1 ; HIRASHITA, N1
[1] VLSI R&D Center, Oki Electric Industry Co., Ltd., Higashi-Asakawa, Hachioji, Tokyo 1930, Japan
Source

Japanese journal of applied physics. 1997, Vol 36, Num 5A, pp 2561-2564 ; 1 ; ref : 15 ref

CODEN
JJAPA5
ISSN
0021-4922
Scientific domain
Crystallography; Optics; Condensed state physics; Physics; Plasma physics
Publisher
Japanese journal of applied physics, Tokyo
Publication country
Japan
Document type
Article
Language
English
Keyword (fr)
Circuit intégré Disruption thermique Etude expérimentale Etude transversale Fiabilité Microscopie électronique transmission Oxyde Silicium Technologie MOS
Keyword (en)
Integrated circuit Thermal breakdown Experimental study Cross sectional study Reliability Transmission electron microscopy Oxides Silicon MOS technology
Keyword (es)
Circuito integrado Disrupción térmica Estudio experimental Estudio transversal Fiabilidad Microscopía electrónica transmisión Óxido Silicio Tecnología MOS
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03B Testing, measurement, noise and reliability

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2690018

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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