The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs
- Author
- ESPOSTO, Michele1 ; DI LECCE, Valerio1 ; BONAIUTI, Matteo1 ; CHINI, Alessandro1
[1] Information Engineering Department, University of Modena and Reggio Emilia, Strada Vignolese 905, 41125 Modena, Italy - Source
Journal of electronic materials. 2013, Vol 42, Num 1, pp 15-20, 6 p ; ref : 20 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Author keyword
- AlGaN/GaN high-electron-mobility transistors (HEMTs) Schottky contact copper diffusion copper gate drain current collapse interface trap
- Keyword (fr)
- Barrière Schottky Centre accepteur Composé III-V Contrainte thermique Courant continu Courant critique Courant drain Cuivre Diffusion(transport) Electrode commande Energie activation Etat interface Interface Méthode PECVD Nickel Nitrure de gallium Or Pastille électronique Phénomène transitoire Piège Porte logique Radiofréquence Semiconducteur III-V Simulation numérique Tellurure de gallium Transistor mobilité électron élevée 6835F 8115G 8530T AlGaN GaN SiN
- Keyword (en)
- Schottky barrier Acceptor center III-V compound Thermal stress Direct current Critical current Drain current Copper Diffusion Gates Activation energy Interface state Interface PECVD Nickel Gallium nitride Gold Wafer Transients Trap Logic gate Radiofrequency III-V semiconductors Numerical simulation Gallium tellurides High electron mobility transistor
- Keyword (es)
- Barrera Schottky Centro aceptor Compuesto III-V Tensión térmica Corriente contínua Corriente crítica Corriente dren Cobre Energía activación Estado interfase Interfase Niquel Galio nitruro Oro Pastilla electrónica Fenómeno transitorio Trampa Puerta lógica Radiofrecuencia Simulación numérica Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35F Diffusion; interface formation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26974372
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s11664-012-2268-2 
https://dx.doi.org/10.1007/s11664-012-2268-2
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