Basic principles of STT-MRAM cell operation in memory arrays : Emerging non-volatile memories: magnetic and resistive technologies
- Author
- KHVALKOVSKIY, A. V1 ; APALKOV, D1 ; LOTTIS, D1 ; CHEN, E1 ; NIKITIN, V1 ; KROUNBI, M1 ; WATTS, S1 ; CHEPULSKII, R1 ; BEACH, R. S1 ; ONG, A1 ; TANG, X1 ; DRISKILL-SMITH, A1 ; BUTLER, W. H2 ; VISSCHER, P. B2
[1] Samsung Electronics, Semiconductor R&D Center (Grandis), San Jose, CA 95134, United States
[2] Center for Materials for Information Technology and Department of Physics, University of Alabama, Tuscaloosa, AL 35487, United States - Source
Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 7 ; 074001.1-074001.20 ; ref : 106 ref
- CODEN
- JPAPBE
- ISSN
- 0022-3727
- Scientific domain
- Condensed state physics; Physics; Plasma physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Circuit intégré Dispositif à mémoire Evaluation performance Mémoire accès direct Mémoire non volatile
- Keyword (en)
- Integrated circuit Memory devices Performance evaluation Random access memory Non volatile memory
- Keyword (es)
- Circuito integrado Evaluación prestación Memoria acceso directo Memoria no volátil
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03I Storage and reproduction of information / 001D03I02 Magnetic and optical mass memories
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26975808
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0022-3727/46/7/074001 
https://dx.doi.org/10.1088/0022-3727/46/7/074001
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