The impact of interface/border defect on performance and reliability of high-k/metal-gate CMOSFET
- Author
- YE, Wen-Kuan1 ; CHEN, Po-Ying2 ; GAN, Kwang-Jow3 ; WANG, Jer-Chyi4 ; SUNG LAI, Chao4
[1] Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung, Taiwan, Province of China
[2] Department of Information Engineering, I-Shou University, Kaohsiung, Taiwan, Province of China
[3] Department of Electronic Engineering, National Chiayi University, Chiayi, Taiwan, Province of China
[4] Department of Electronic Engineering, Chang Cung University, Taoyuan, Taiwan, Province of China - Source
Microelectronics and reliability. 2013, Vol 53, Num 2, pp 265-269, 5 p ; ref : 9 ref
- CODEN
- MCRLAS
- ISSN
- 0026-2714
- Scientific domain
- Electronics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche interfaciale Couche oxyde Diélectrique permittivité élevée Effet on off Epaisseur Evaluation performance Fiabilité Lacune Oxyde d'hafnium Oxygène Revêtement Transistor MOS complémentaire Transistor MOSFET HfO2
- Keyword (en)
- Interfacial layer Oxide layer High k dielectric On off effect Thickness Performance evaluation Reliability Vacancy Hafnium oxide Oxygen Coatings Complementary MOS transistor MOSFET
- Keyword (es)
- Capa interfacial Capa óxido Dieléctrico alta constante dieléctrica Efecto on off Espesor Evaluación prestación Fiabilidad Cavidad Hafnio óxido Oxígeno Revestimiento Transistor MOS complementario
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27028943
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.microrel.2012.07.036 
https://dx.doi.org/10.1016/j.microrel.2012.07.036
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