Challenges Regarding Parallel Connection of SiC JFETs
- Author
- PEFTITSIS, Dimosthenis1 ; BABURSKE, Roman2 ; RABKOWSKI, Jacek1 ; LUTZ, Josef2 ; TOLSTOY, Georg1 ; NEE, Hans-Peter1
[1] Laboratory of Electrical Energy Conversion Laboratory, School of Electrical Engineering, KTH Royal Institute of Technology, 10044 Stockholm, Sweden
[2] Faculty of Electrical Engineering and Information Technology, Chemnitz University of Technology, 09126 Chemnitz, Germany - Source
IEEE transactions on power electronics. 2013, Vol 28, Num 3, pp 1449-1463, 15 p ; ref : 31 ref
- CODEN
- ITPEE8
- ISSN
- 0885-8993
- Scientific domain
- Electrical engineering
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Junction field-effect transistor (JFET) parallel-connected switches pinch-off voltage reverse breakdown voltage of the gate silicon carbide (SiC)
- Keyword (fr)
- Caractéristique statique Caractéristique transfert Circuit porte Commutateur Commutation Convertisseur puissance Dépendance température Désadaptation Electronique puissance En parallèle Etat actuel Etude comparative Evaluation performance Excitateur Grande puissance Implantation circuit Inductance Montage parallèle Silicium Tension de grille Tension disruptive Tension pincement Transistor effet champ jonction
- Keyword (en)
- Static characteristic Transfer characteristic Gating circuits Selector switch Switching Power converter Temperature dependence Mismatching Power electronics Parallel State of the art Comparative study Performance evaluation Driver High power Circuit layout Inductance Parallel connection Silicon Gate voltage Disruptive voltage Pinch off voltage Junction field effect transistor
- Keyword (es)
- Característica estática Característica transferencia Conmutador Conmutación Convertidor potencia Desadaptación Electrónica potencia En paralelo Estado actual Estudio comparativo Evaluación prestación Excitador Gran potencia Inductancia Acoplamiento derivación Silicio Voltaje de rejilla Voltaje disruptivo Voltage constricción Transistor efecto campo unión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A4 Signal convertors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A7 Switching, multiplexing, switched capacity circuits
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D05 Electrical engineering. Electrical power engineering / 001D05F Connection and protection apparatus
- Discipline
- Electrical engineering. Electroenergetics Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27041771
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TPEL.2012.2206611 
https://dx.doi.org/10.1109/TPEL.2012.2206611
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