Dependence of nickel gettering on crystalline nature in as-grown Czochralski silicon wafer
- Autor
- LEE, In-Ji1 ; PAIK, Ungyu2 ; PARK, Jea-Gun3
[1] Department of Advanced Materials & Chemical Engineering, Hanyang University, Seoul 133-791, Korea, Republic of
[2] Department of Energy Engineering, Hanyang University, Seoul 133-791, Korea, Republic of
[3] Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea, Republic of - Fuente
Journal of crystal growth. 2013, Vol 365, pp 6-10, 5 p ; ref : 45 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- A1. Defects A1. Impurities A1. Point defects A2. Czochralski method A2. Single crystal growth B2. Semiconducting silicon
- Palabra clave (fr)
- Ammoniac Croissance cristalline en phase fondue Croissance cristalline Défaut ponctuel Lacune Monocristal Mémoire flash Méthode Czochralski Nickel Pastille électronique Précipité Recuit thermique rapide Relaxation Semiconducteur Silicium Traitement thermique 6172J 8110 8110F NH3 Ni Si
- Palabra clave (in)
- Ammonia Crystal growth from melts Crystal growth Point defects Vacancies Monocrystals Flash memories Czochralski method Nickel Wafers Precipitates Rapid thermal annealing Relaxation Semiconductor materials Silicon Heat treatments
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72J Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10F Growth from melts; zone melting and refining
- Disciplina
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 27054560
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2012.12.033 
https://dx.doi.org/10.1016/j.jcrysgro.2012.12.033
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