Improved device performance of AlGaInP-based vertical light-emitting diodes with low-n ATO antireflective coating layer
- Author
- HEE KWAN LEE1 ; MYUNG SUB KIM1 ; JAE SU YU1
[1] Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, I Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Korea, Republic of - Source
Microelectronic engineering. 2013, Vol 104, pp 29-32, 4 p ; ref : 12 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- ATO antireflective coating layer AlGaInP/GaInP MQWs Light extraction Oblique-angle deposition Red vertical light-emitting diodes
- Keyword (fr)
- Bande interdite Caractéristique électrique Composé quaternaire Composé ternaire Courant injection Diode électroluminescente Dégradation Déplacement fréquence Dépôt pulvérisation Electroluminescence Endommagement Epaisseur Evaluation performance Fabrication microélectronique Indice réfraction Lumière rouge Nanocolonne Oxyde d'étain Phosphure d'aluminium Phosphure d'indium Phosphure de gallium Propriété électrique Puissance sortie Puits quantique multiple Revêtement antiréfléchissant Semiconducteur type n 4279W 8107S 8540H 8560J AlGaInP Couche fenêtre GaInP Composé III-V Dispositif optoélectronique
- Keyword (en)
- Energy gap Electrical characteristic Quaternary compound Ternary compound Injection current Light emitting diode Degradation Frequency shift Sputter deposition Electroluminescence Damaging Thickness Performance evaluation Microelectronic fabrication Refraction index Red light Nanocolumn Tin oxide Aluminium phosphide Indium phosphide Gallium phosphide Electrical properties Output power Multiple quantum well Antireflection coating n type semiconductor Window layer III-V compound Optoelectronic device
- Keyword (es)
- Banda prohibida Característica eléctrica Compuesto cuaternario Compuesto ternario Corriente inyección Diodo electroluminescente Degradación Desplazamiento frecuencia Electroluminiscencia Deterioración Espesor Evaluación prestación Fabricación microeléctrica Indice refracción Luz roja Nanocolumna Estaño óxido Aluminio fosfuro Indio fosfuro Galio fosfuro Propiedad eléctrica Potencia salida Pozo cuántico múltiple Revestimiento antirreflexión Semiconductor tipo n Compuesto III-V Dispositivo optoelectrónico
- Keyword (de)
- Energieluecke Elektrische Groesse Dicke Brechungsindex Zinnoxid Aluminiumphosphid Indiumphosphid Galliumphosphid Elektrische Eigenschaft N Leiter
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films / 001B70H20C Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D11 Metals. Metallurgy / 001D11G Mechanical properties and methods of testing. Rheology. Fracture mechanics. Tribology / 001D11G05 Fractures
- Discipline
- Electronics Metals. Metallurgy Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27054899
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2012.11.001 
https://dx.doi.org/10.1016/j.mee.2012.11.001
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