The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs
- Author
- CHOI, Sukwon1 ; HELLER, Eric R2 ; DORSEY, Donald2 ; VETURY, Ramakrishna3 ; GRAHAM, Samuel1
[1] George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332, United States
[2] Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433, United States
[3] Defense and Power Business Unit, RF Micro Devices, Charlotte, NC 28269, United States - Source
I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 159-162, 4 p ; ref : 21 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- -Gallium nitride (GaN) Raman scattering high electron mobility transistors (HEMTs) semiconductor device reliability temperature measurement
- Keyword (fr)
- Autoéchauffement Champ électrique Comportement thermique Composé binaire Composé ternaire Densité porteur charge Diffusion Raman Dissipation énergie Distribution champ Essai vieillissement accéléré Evaluation performance Fiabilité dispositif semiconducteur Grille transistor Mesure température Modèle thermique Nitrure d'aluminium Nitrure de gallium Point chaud Source chaleur Spectrométrie Raman Transistor mobilité électron élevée AlGaN GaN Composé III-V
- Keyword (en)
- Self heating Electric field Thermal behavior Binary compound Ternary compound Charge carrier density Raman scattering Energy dissipation Field distribution Accelerated aging test Performance evaluation Semiconductor device reliability Transistor gate Temperature measurement Thermal model Aluminium nitride Gallium nitride Hot spot Heat source Raman spectrometry High electron mobility transistor III-V compound
- Keyword (es)
- Autocalentamiento Campo eléctrico Comportamiento térmico Compuesto binario Compuesto ternario Concentración portador carga Difusión Ramán Disipación energía Distribución campo Ensayo envejecimiento acelerado Evaluación prestación Rejilla transistor Medida temperatura Modelo térmico Aluminio nitruro Galio nitruro Punto caliente Fuente calor Espectrometría Raman Transistor movibilidad elevada electrones Compuesto III-V
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03B Testing, measurement, noise and reliability
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27077627
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2012.2224115 
https://dx.doi.org/10.1109/TED.2012.2224115
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