Crystalline perfection of Hg1-xCdxTe epilayers by the vertical dipping liquid-phase epitaxy
- Author
- ZHU, J1 2 3 ; CHU, J1 ; LI, B1 ; CHEN, X1 ; CAO, J1 ; CHENG, J2
[1] National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
[2] Department of Inorganic Materials, East China University of Science and Technology, Shanghai 200237, China
[3] Test Center, Shanghai Institute of Building Materials, Shanghai 200433, China - Source
Journal of crystal growth. 1997, Vol 177, Num 1-2, pp 61-66 ; ref : 28 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Cadmium tellurure Composé ternaire Croissance cristalline Densité dislocation Epitaxie phase liquide Etude expérimentale Hétérojonction Matériau semiconducteur Mercure tellurure Perfection cristalline XRD Cd Hg Te Hg1-xCdxTe Composé minéral
- Keyword (en)
- Cadmium tellurides Ternary compounds Crystal growth Dislocation density LPE Experimental study Heterojunctions Semiconductor materials Mercury tellurides Crystal perfection XRD Inorganic compounds
- Keyword (es)
- Densidad dislocación Perfección cristalina
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
- Pacs
- 8115L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2708687
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(96)00801-9 
https://dx.doi.org/10.1016/S0022-0248(96)00801-9
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