The development of high performance SnO2:F as TCOs for thin film silicon solar cells
- Author
- YATES, Heather M1 ; EVANS, Philip1 ; SHEEL, David W1 2 ; NICOLAY, Sylvain3 ; DING, Laura3 ; BALLIF, Christophe3
[1] University of Salford, Manchester, M5 4WT, United Kingdom
[2] CVD Technologies Ltd., University of Salford Campus, Manchester, M5 4MT, United Kingdom
[3] EPFL STI IMT-NE PV-LAB, Photovoltaics and thin film electronics laboratory, IMT, Rue A.-L. Breguet 2, 2000 Neuchâtel, Switzerland - Source
Surface & coatings technology. 2012, Vol 213, pp 167-174, 8 p ; ref : 21 ref
- CODEN
- SCTEEJ
- ISSN
- 0257-8972
- Scientific domain
- General chemistry, physical chemistry; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Atmospheric pressure chemical vapour deposition Deposition temperature Growth rate PV Tin oxide
- Keyword (fr)
- Cellule solaire Couche mince Croissance Dépôt chimique phase vapeur Dépôt chimique Développement Oxyde d'étain Pression atmosphérique Température Traitement surface Vitesse
- Keyword (en)
- Solar cells Thin films Growth CVD Chemical deposition Ontogenesis Tin oxide Atmospheric pressure Temperature Surface treatments Velocity
- Keyword (es)
- Depósito químico Estaño óxido
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A65 Surface treatments
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27100381
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.surfcoat.2012.10.040 
https://dx.doi.org/10.1016/j.surfcoat.2012.10.040
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