The preparation of a CuInSe2 solar cell by metal organic chemical vapor deposition
- Author
- CHOI, In-Hwan1
[1] Department of Physics, Chung-Ang University, Seoul, 156-756, Korea, Republic of - Source
Thin solid films. 2012, Vol 525, pp 137-140, 4 p ; ref : 15 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Copper indium diselenide Metal organic chemical vapor deposition Thin film solar cell Zinc oxide
- Keyword (fr)
- Addition bore Caractéristique courant tension Cellule solaire Chalcopyrite Couche mince Courant court circuit Cuivre Indium Séléniure Mixte Dopage Facteur remplissage Méthode MOCVD Oxyde de zinc Tension circuit ouvert CuInSe2 ZnO
- Keyword (en)
- Boron addition Voltage current curve Solar cell Chalcopyrite Thin film Short circuit currents Copper Indium Selenides Mixed Doping Fill factor MOCVD Zinc oxide Open circuit voltage
- Keyword (es)
- Adición boro Característica corriente tensión Célula solar Calcopirita Capa fina Cobre Indio Seleniuro Mixto Doping Zinc óxido
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells
- Discipline
- Energy
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27101050
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2012.07.136 
https://dx.doi.org/10.1016/j.tsf.2012.07.136
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