Influence of the GaN capping thickness on the strain and photoluminescence properties of InN/GaN quantum dots
- Author
- KE, Wen-Cheng1 ; WU, Yue-Han2 ; HOUNG, Wei-Chung1 ; WEI, Chih-An1
[1] Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan, Province of China
[2] Department of Materials Science and Engineering, National Chiao-Tung University, Hsin-Chu 300, Taiwan, Province of China - Conference title
- TACT 2011 International Thin Films Conference
- Conference name
- TACT 2011 International Thin Films Conference (Kenting 2011-11-20)
- Author (monograph)
- HOFSÄSS, Hans (Editor); KUO, Cheng-Tzu (Editor); CHU, Jinn P (Editor); FENG, Zhe-Chuan (Editor); HSIEH, Jang-Hsing (Editor); GINLEY, David (Editor); HUANG, Jow Lay (Editor)1 ; TING, Jyh Ming (Editor)1
Taiwan Association for Coating and Thin Film Technology (TACT), Taiwan, Province of China (Organiser of meeting)
[1] Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, Province of China - Source
Thin solid films. 2013, Vol 529, pp 111-114, 4 p ; ref : 26 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Capping layer InN Metal organic chemical vapor deposition PL XRD
- Keyword (fr)
- Basse pression Composé III-V Couche épaisse Densité porteur charge Densité élevée Diffraction RX Diffusion mutuelle Déformation résiduelle Epaisseur couche Epitaxie Gallium Indium Interface Lacune Monocristal Méthode MOCVD Nanomatériau Nitrure d'indium Nitrure de gallium Paramètre cristallin Photoluminescence Point quantique Semiconducteur III-V Structure cristalline 7855 8105E 8107 8107T GaN In InN Substrat GaN Substrat saphir
- Keyword (en)
- Low pressure III-V compound Thick films Carrier density High density XRD Interdiffusion Residual strain Layer thickness Epitaxy Gallium Indium Interfaces Vacancies Monocrystals MOCVD Nanostructured materials Indium nitride Gallium nitride Lattice parameters Photoluminescence Quantum dots III-V semiconductors Crystal structure
- Keyword (es)
- Compuesto III-V Densidad elevada Difusión mútua Deformación residual Espesor capa Indio nitruro Galio nitruro
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27153862
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2012.05.040 
https://dx.doi.org/10.1016/j.tsf.2012.05.040
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