Ab initio study the effects of Si and Mg dopants on point defects and Y diffusion in YAG
- Author
- SHENGLI JIANG1 2 ; TIECHENG LU1 ; JUN CHEN2 3
[1] Department of Physics and Key Laboratory for Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China
[2] Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
[3] Center for Applied Physics and Technology, Peking University, Beijing 100871, China - Source
Computational materials science. 2013, Vol 69, pp 261-266, 6 p ; ref : 36 ref
- ISSN
- 0927-0256
- Scientific domain
- Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Point defects Si and Mg doping Y diffusion Y3Al5O12
- Keyword (fr)
- Addition magnésium Addition silicium Autodiffusion Calcul ab initio Chaleur formation Densité charge Dopage Défaut ponctuel Formation défaut Frittage Grenat aluminium yttrium Lacune Méthode fonctionnelle densité Sous réseau Y3Al5O12
- Keyword (en)
- Magnesium additions Silicon additions Self-diffusion Ab initio calculations Heat of formation Charge density Doping Point defects Defect formation Sintering YAG Vacancies Density functional method Sublattices
- Keyword (es)
- Doping Formación defecto
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72J Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids / 001B60F30H Self-diffusion and ionic conduction in nonmetals
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27158173
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.commatsci.2012.11.045 
https://dx.doi.org/10.1016/j.commatsci.2012.11.045
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