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Temperature-dependent yield effects on composite beams used in CMOS MEMS

Author
KUO, F. Y1 2 ; CHANG, C. S1 3 ; LIU, Y. S1 2 ; WEN, K. A1 2 ; FAN, L. S1 2 4
[1] Rm. 316, Microelectronics and Information Systems Research Center, No.1001, Daxue Rd., East Dist., Hsinchu City 300, Taiwan, Province of China
[2] Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, Province of China
[3] Global Sensing Core, Inc., Hsinchu, Taiwan, Province of China
[4] Institute of Nano Engineering and MicroSystems, National Tsing Hua University, Hsinchu, Taiwan, Province of China
Source

Journal of micromechanics and microengineering (Print). 2013, Vol 23, Num 3 ; 035023.1-035023.8 ; ref : 19 ref

ISSN
0960-1317
Scientific domain
Electronics; Mechanical engineering
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Circuit intégré monolithique Contrainte interne Contrainte résiduelle Dispositif microélectromécanique Distribution contrainte Effet température Limite élasticité Méthode analytique Poutre composite Rayon courbure Système sur puce Technologie MOS complémentaire Transducteur capacitif
Keyword (en)
Monolithic integrated circuits Internal stresses Residual stresses Microelectromechanical device Stress distribution Temperature effects Yield strength Analytical method Composite girder Radius of curvature System on a chip Complementary MOS technology Capacitive transducer
Keyword (es)
Dispositivo microelectromecánico Método analítico Vigna compuesta Radio curvatura Tecnología MOS complementario Transductor capacitivo
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G10 Mechanical instruments, equipment and techniques / 001B00G10C Micromechanical devices and systems

Discipline
Metrology
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
27159147

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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