Inductively coupled plasma reactive ion etching of IrMn magnetic thin films using a CH4/O2/Ar gas
- Author
- TEA YOUNG LEE1 ; EUN HO KIM1 ; CHEE WON CHUNG1
[1] Department of Chemical Engineering, Inha University, 253 Yonghyun-Dong, Nam-Ku, Incheon 402-751, Korea, Republic of - Conference title
- The 3rd International Conference on Microelectronics and Plasma Technology (ICMAP) 2011
- Conference name
- ICMAP 2011 International Conference on Microelectronics and Plasma Technology (Dalian 2011-07-04)
- Author (monograph)
- LEE, Nae-Eung (Editor)1 ; SHI, J. J (Editor)2 ; KINOSHITA, Keijo (Editor)9 ; NOZAKI, Tomohiro (Editor)10 ; FUJIWARA, Nobuo (Editor)11 ; HOU, L. J (Editor)12 ; ZHANG, X. D (Editor)3 ; TU, Y (Editor)4 ; XIN, Y (Editor)13 ; LI, S. Z (Editor)5 ; JI HYUN KIM (Editor)6 ; KIM, Hyung-Sub (Editor)1 ; LEE, Taeyoon (Editor)7 ; TOYODA, Hirokata (Editor)8
[1] Sungkyunkwan University, Korea, Republic of
[2] Donghua University, China
[3] Nankia University, China
[4] Southeast University, China
[5] Dalian University of Technology, China
[6] Korea University, Korea, Republic of
[7] Yonsei University, Korea, Republic of
[8] Nagoya University, Japan
[9] NEC, Japan
[10] Tokyo Institute of Technology, Japan
[11] Mitsubishi Electric, Japan
[12] Max Planck Institute for Extraterrestrial Physics, Germany
[13] Suzhou University, China - Source
Thin solid films. 2012, Vol 521, pp 229-234, 6 p ; ref : 15 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- CH4/O2/Ar gas Inductively coupled plasma reactive ion etching IrMn thin films Magnetic tunnel junction
- Keyword (fr)
- Analyse surface Anisotropie Basse pression Couche mince magnétique Couche mince Diode électroluminescente Gravure ionique réactive Gravure plasma Haute pression Jonction tunnel Méthane Nitrure de titane Plasma couplé inductivement Spectre photoélectron RX Sélectivité Tension polarisation Vitesse gravure 5277B 5280Y 7570A 8560D
- Keyword (en)
- Surface analysis Anisotropy Low pressure Magnetic thin films Thin films Light emitting diodes Reactive ion etching Plasma etching High pressure Tunnel junction Methane Titanium nitride Inductively coupled plasma X-ray photoelectron spectra Selectivity Bias voltage Etching rate
- Keyword (es)
- Grabado iónico reactivo Grabado plasma Unión túnel Titanio nitruro Selectividad Voltage polarización Velocidad grabado
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B77 Plasma applications / 001B50B77B Etching and cleaning
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B80 Electric discharges / 001B50B80Y Discharges for spectral sources (including inductively coupled plasmas)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70E Magnetic properties and materials / 001B70E70 Magnetic properties of surface, thin films and multilayers / 001B70E70A Magnetic properties of monolayers and thin films
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of gases, plasmas and electric discharges
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27189278
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2011.11.065 
https://dx.doi.org/10.1016/j.tsf.2011.11.065
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