Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
- Author
- NEPAL, Neeraj1 ; MAHADIK, Nadeemullah A1 ; NYAKITI, Luke O1 ; QADRI, Syed B2 ; MEHL, Michael J2 ; HITE, Jennifer K1 ; EDDY, Charles R1
[1] Electronics Science & Technology Division, U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, D.C. 20375, United States
[2] Material Sciences and Technology Division, U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, D.C. 20375, United States - Source
Crystal growth & design. 2013, Vol 13, Num 4, pp 1485-1490, 6 p ; ref : 28 ref
- ISSN
- 1528-7483
- Scientific domain
- Crystallography
- Publisher
- American Chemical Society, Washington,DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Chlorure de sodium Composé III-V Couche mince Couche épitaxique Diffraction RX Epitaxie Microscopie électronique transmission Mécanisme croissance Nitrure d'indium Nitrure de gallium Réseau cubique Réseau hexagonal Saphir Semiconducteur III-V Silicium Simulation numérique Structure NaCl Traitement par plasma 8110A GaN InN NaCl Si Substrat saphir
- Keyword (en)
- Sodium chloride III-V compound Thin films Epitaxial layers XRD Epitaxy Transmission electron microscopy Growth mechanism Indium nitride Gallium nitride Cubic lattices Hexagonal lattices Sapphire III-V semiconductors Silicon Digital simulation NaCl structure Plasma assisted processing
- Keyword (es)
- Sodio cloruro Compuesto III-V Mecanismo crecimiento Indio nitruro Galio nitruro Estructura NaCl
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27205526
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/cg3016172 
https://dx.doi.org/10.1021/cg3016172
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