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The effect of temperature and angle of incidence on photonic band gap in a dispersive Si-based one dimensional photonic crystal

Author
KUMAR, Vipin1 ; SUTHAR, B2 ; KUMAR, Arun3 ; SINGH, Kh. S1 ; BHARGAVA, A4
[1] Department of Physics, Digamber Jain (P.G.) College, Baraut 250611, India
[2] Department of Physics, Government Engineering College, Bikaner 334004, India
[3] AITTM, Amity University, Noida, India
[4] Nanophysics Laboratory, Department of Physics, Government Dungar College, Bikaner 334001, India
Source

Physica. B, Condensed matter. 2013, Vol 416, pp 106-109, 4 p ; ref : 23 ref

ISSN
0921-4526
Scientific domain
Crystallography; Condensed state physics
Publisher
Elsevier, Kidlington
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
Optical properties Photonic band gap Photonic crystal Transfer matrix method
Keyword (fr)
Angle incidence Bande interdite photonique Cristal photonique Effet température Indice réfraction Méthode matrice transfert Propriété optique Silicium Système 1 dimension Si
Keyword (en)
Incidence angle Photonic band gap Photonic crystals Temperature effects Refractive index Transfer matrix method Optical properties Silicon One-dimensional systems
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B70 Optical materials / 001B40B70Q Photonic bandgap materials

Discipline
Physics : optics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
27212081

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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