Impurity engineering of Czochralski silicon
- Autor
- XUEGONG YU1 ; JIAHE CHEN1 ; XIANGYANG MA1 ; DEREN YANG1
[1] State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China - Fuente
Materials science & engineering. R, Reports. 2013, Vol 74, Num 1-2, pp 1-33, 33 p ; ref : 279 ref
- ISSN
- 0927-796X
- Campo Científico
- Crystallography; Mechanics acoustics; Metallurgy, welding; Condensed state physics
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- Co-doping technology Czochralski silicon Defects Impurity engineering Oxygen precipitate Void
- Palabra clave (fr)
- Addition azote Article synthèse Carbone Cavité dans réseau Codopage Commande dynamique Contrôle qualité Croissance cristalline en phase fondue Croissance cristalline Défaut cristallin Défaut ponctuel Germanium Impureté Interaction défaut cristallin Microélectronique Oxyde grille Pastille électronique Porte logique Précipité Résistance mécanique Silicium Sorption getter 6172J 6172Y 8110F Substrat silicium
- Palabra clave (in)
- Nitrogen additions Reviews Carbon Voids Codoping dynamic control Quality control Crystal growth from melts Crystal growth Crystal defects Point defects Germanium Impurities Crystal defect interaction Microelectronics Gate oxide Wafers Logic gates Precipitates Mechanical strength Silicon Gettering
- Palabra clave (es)
- Codrogado Comando dinámico Interacción defecto cristalino Oxido rejilla
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72J Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Y Interaction between different crystal defects; gettering effect
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10F Growth from melts; zone melting and refining
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Disciplina
- Electronics Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 27238516
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mser.2013.01.002 
https://dx.doi.org/10.1016/j.mser.2013.01.002
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