Growth of InN thin films on different Si substrates at ambient temperature
- Author
- AMIRHOSEINY, Maryam1 ; HASSAN, Zainuriah1 ; SHA SHIONG NG1
[1] Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang, Malaysia - Source
Microelectronics international. 2013, Vol 30, Num 2, pp 63-67, 5 p ; ref : 3/4 p
- ISSN
- 1356-5362
- Scientific domain
- Electronics
- Publisher
- MCB University Press, Bradford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- Films (states of matter) InN Radio frequency identification Reactive sputtering Scanning electron microscope Silicon (110) Silicon X-ray diffraction
- Keyword (fr)
- Analyse structurale Caractéristique optique Contrainte traction Couche mince Cristallite Densité défaut Diffraction RX Dispersion énergie Facteur réflexion Matériau cristallin Microscopie force atomique Microscopie électronique balayage Nanocristal Nitrure d'indium Pulvérisation cathodique Pulvérisation haute fréquence Pulvérisation réactive Radiofréquence Silicium Spectrométrie FTIR Spectrométrie RX Spectrométrie Raman Spectrométrie dispersive Structure surface Température ambiante Transformation Fourier 0779 8107B 8115C InN
- Keyword (en)
- Structural analysis Optical characteristic Tensile stress Thin films Crystallites Defect density XRD Energy dispersion Reflectivity Crystalline material Atomic force microscopy Scanning electron microscopy Nanocrystal Indium nitride Cathode sputtering Radiofrequency sputtering Reactive sputtering Radiofrequency Silicon Fourier-transformed infrared spectrometry X-ray spectroscopy Raman spectroscopy Dispersive spectrometry Surface structure Ambient temperature Fourier transformation
- Keyword (es)
- Análisis estructural Característica óptica Tensión traccíon Densidad defecto Dispersión energía Material cristalino Nanocristal Indio nitruro Pulverización alta frecuencia Radiofrecuencia Espectrometría FTIR Espectrometría dispersiva
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G79 Scanning probe microscopes, components and techniques
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07B Nanocrystalline materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Metrology Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27292523
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1108/13565361311314430 
https://dx.doi.org/10.1108/13565361311314430
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1108\/13565361311314430\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"Growth of InN thin films on different Si substrates at ambient temperature\";s:9:\"\u0000*\u0000jtitle\";s:30:\"Microelectronics international\";s:9:\"\u0000*\u0000stitle\";s:17:\"Microelectro. int\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"30\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:2:\"63\";s:8:\"\u0000*\u0000epage\";s:2:\"67\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1356-5362\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:11:\"AMIRHOSEINY\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Maryam\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:17:\"HASSAN, Zainuriah\";i:1;s:13:\"SHA SHIONG NG\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:74:\"Growth of InN thin films on different Si substrates at ambient temperature\";s:8:\"\u0000*\u0000place\";s:8:\"Bradford\";s:6:\"\u0000*\u0000pub\";s:20:\"MCB University Press\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1108\/13565361311314430\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"Growth of InN thin films on different Si substrates at ambient temperature\";s:9:\"\u0000*\u0000jtitle\";s:30:\"Microelectronics international\";s:9:\"\u0000*\u0000stitle\";s:17:\"Microelectro. int\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"30\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:2:\"63\";s:8:\"\u0000*\u0000epage\";s:2:\"67\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1356-5362\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:11:\"AMIRHOSEINY\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Maryam\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:17:\"HASSAN, Zainuriah\";i:1;s:13:\"SHA SHIONG NG\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:74:\"Growth of InN thin films on different Si substrates at ambient temperature\";s:8:\"\u0000*\u0000place\";s:8:\"Bradford\";s:6:\"\u0000*\u0000pub\";s:20:\"MCB University Press\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1108\/13565361311314430\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1108\/13565361311314430\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"Growth of InN thin films on different Si substrates at ambient temperature\";s:9:\"\u0000*\u0000jtitle\";s:30:\"Microelectronics international\";s:9:\"\u0000*\u0000stitle\";s:17:\"Microelectro. int\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"30\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:2:\"63\";s:8:\"\u0000*\u0000epage\";s:2:\"67\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1356-5362\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:11:\"AMIRHOSEINY\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Maryam\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:17:\"HASSAN, Zainuriah\";i:1;s:13:\"SHA SHIONG NG\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:74:\"Growth of InN thin films on different Si substrates at ambient temperature\";s:8:\"\u0000*\u0000place\";s:8:\"Bradford\";s:6:\"\u0000*\u0000pub\";s:20:\"MCB University Press\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1108\/13565361311314430\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"Growth of InN thin films on different Si substrates at ambient temperature\";s:9:\"\u0000*\u0000jtitle\";s:30:\"Microelectronics international\";s:9:\"\u0000*\u0000stitle\";s:17:\"Microelectro. int\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"30\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:2:\"63\";s:8:\"\u0000*\u0000epage\";s:2:\"67\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1356-5362\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:11:\"AMIRHOSEINY\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Maryam\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:17:\"HASSAN, Zainuriah\";i:1;s:13:\"SHA SHIONG NG\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:74:\"Growth of InN thin films on different Si substrates at ambient temperature\";s:8:\"\u0000*\u0000place\";s:8:\"Bradford\";s:6:\"\u0000*\u0000pub\";s:20:\"MCB University Press\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
